Product Information

MASMCG10CA

MASMCG10CA electronic component of Microchip

Datasheet
Diode TVS Single Bi-Dir 10V 1.5KW 2-Pin DO-215AB Bulk

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 4.2426 ea
Line Total: USD 424.26

0 - Global Stock
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
0 - Global Stock


Ships to you between Tue. 30 Apr to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

MASMCG10CA
Microchip

1 : USD 7.0483
10 : USD 6.6311

0 - Global Stock


Ships to you between Tue. 30 Apr to Mon. 06 May

MOQ : 100
Multiples : 100

Stock Image

MASMCG10CA
Microchip

100 : USD 4.2426
200 : USD 4.2426
300 : USD 4.2426
400 : USD 4.2426

0 - Global Stock


Ships to you between Tue. 30 Apr to Mon. 06 May

MOQ : 2
Multiples : 2

Stock Image

MASMCG10CA
Microchip

2 : USD 7.0483
10 : USD 6.6311

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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MSMCG5.0A MXLSMCG170CAe3, MSMCJ5.0 MXLSMCJ170CAe3 Screening in Surface Mount 1500 Watt reference to Available MIL-PRF-19500 Transient Voltage Suppressor available DESCRIPTION The MSMCG(J)5.0A through MXLSMCG(J)170A series of 1500 watt high-reliability Transient Voltage Suppressors (TVSs) protects a variety of voltage-sensitive components. The SMCG gull- wing design in the DO-215AB package allows for visible solder connections. The SMCJ J-bend design in the DO-214AB package allows for greater PC board mounting density. Selections include unidirectional and bidirectional as well as RoHS compliant versions. These are available with a variety of upscreening options for enhanced reliability. They can protect against the secondary DO-215AB effects of lightning per IEC61000-4-5 and against voltage pulses from inductive switching environments and induced by RF radiation. Since their response time is virtually instantaneous, (SMCG) Package they can also be used in protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. Important: For the latest information, visit our website MSMCG5.0A MXLSMCG170CAe3, MSMCJ5.0 MXLSMCJ170CAe3 MAXIMUM RATINGS Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature T and T -65 to +150 C J STG Thermal Resistance Junction-to-Lead R 20 C/W JL (1) Thermal Resistance Junction-to-Ambient R 80 C/W JA P 1500 W Peak Pulse Power Dissipation @ 25 C (at 10/1000 s, PP see Figures 1, 2, and 3) Impulse Repetition Rate (duty factor) df 0.01 % t (0 volts to V min.) Unidirectional t <100 ps clamping (BR) clamping Bidirectional <5 ns Rated Average Power Dissipation T = +30 C P 6 W L M(AV) (1) T = +25 C 1.56 A (2) Maximum Forward Surge Current I 200 A (pk) FSM o Solder Temperature @ 10 s T 260 C SP Notes: 1. When mounted on FR4 PC board (1oz Cu) with recommended footprint (see last page). 2. Peak impulse of 8.3 ms half-sine wave at 25 C (unidirectional only). MECHANICAL and PACKAGING CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating. Solderable to MIL-STD-750, method 2026. MARKING: Part number marked on package. POLARITY: Cathode indicated by band. No cathode band on bi-directional devices. TAPE & REEL option: Standard per EIA-481-2 with 16 mm tape (add TR suffix to part number). Consult factory for quantities. WEIGHT: Approximately 0.25 grams. See Package Dimensions on last page. PART NOMENCLATURE MX SM C G 5.0 C A e3 Reliability Level* RoHS Compliance M e3 = RoHS Compliant MA Blank = non-RoHS Compliant MX MXL +/- 5% Tolerance Level *(see High Reliability Up-Screened Plastic Uni/Bidirectional Products Portfolio) C = Bidirectional Blank = Unidirectional Surface Mount Package Reverse Stand-Off Voltage (see Electrical Characteristics 1500 W Power Level table) Gull-wing Lead Frame G = Gull-Wing J = J-Bend RF01001, Rev. A (1/4/13) 2013 Microsemi Corporation Page 2 of 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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