X-On Electronics has gained recognition as a prominent supplier of BLV33 rf bipolar transistors across the USA, India, Europe, Australia, and various other global locations. BLV33 rf bipolar transistors are a product manufactured by Advanced Semiconductor. We provide cost-effective solutions for rf bipolar transistors, ensuring timely deliveries around the world.

BLV33

BLV33 electronic component of Advanced Semiconductor
Images are for reference only
See Product Specifications
Part No.BLV33
Manufacturer: Advanced Semiconductor
Category:RF Bipolar Transistors
Description: Transistors RF Bipolar RF Transistor
Datasheet: BLV33 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 104.2755 ea
Line Total: USD 104.28

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 90.574
10 : USD 84.0535
25 : USD 82.225
50 : USD 82.225
100 : USD 81.7535
250 : USD 79.0625
2500 : USD 79.051

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Type
Brand
Maximum Dc Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the BLV33 RF Bipolar Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the BLV33 RF Bipolar Transistors.

BLV33 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The is a Common Emitter ASI BLV33 Device Designed for Class A PACKAGE STYLE .500 4L STUD Television Applications. FEATURES INCLUDE: Gold Metalization Emitter Ballasting MAXIMUM RATINGS I 12.5 A C V 65 V CESM V 33 V CEO P 132 W T = 25 C C DISS T -65 C to +200 C J 1 = COLLECTOR 2 & 4 = EMITTER T -65 C to +150 C STG 3 = BASE 1.5 C/W JC ORDER CODE: ASI10498 CHARACTERISTICS TC = 25C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV I = 100 mA 33 V CEO C BV I = 25 mA 65 V CES C BV I = 10 mA 4.0 V EBO E I V = 30 V 10 mA CES CE h V = 25 V I = 3.0 A 15 100 --- FE CE C V = 25 V f = 1.0 MHz C 155 CB c V = 25 V I = 100 mA f = 1.0 MHz C CE C 88 pF re V = 25 V I = 100 mA f = 1.0 MHz CE C C 3.0 cs V = 25 V I = 3.0 A 680 CB E f MHz T V = 25 V I = 6.0 A CB E 750 G V = 25 V I = 3.2 A P = 19 W 9.0 9.7 --- P CE C out f = 224.25 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/3 Specifications are subject to change without notice. BLV33 LERROR REFERENCE SOURCE NOT FOUND. Fig. 1 Intermodulation distortion (d ) and power Fig. 2 Cross-modulation distortion (d ) as im cm gain as a function of output power. a function of output power. Conditions for fig. 1 and 2: Typical values V = 25 V I = 3.2 A T = 25C T = 70C f = 224.25 MHz. CE C h h vision A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 2/3 Specifications are subject to change without notice.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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