AON2408 20V N-Channel MOSFET General Description Product Summary V The AON2408 combines advanced trench MOSFET DS 20V technology with a low resistance package to provide I (at V =4.5V) 8A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =4.5V) < 14.5m DS(ON) GS and battery protection applications. R (at V =2.5V) < 19m DS(ON) GS DFN 2x2B D Top View Bottom View D D S D Pin 1 S D G D G Pin 1 S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 2200 VV DS Gate-Source Voltage V 12 V GS T =25C 8 Continuous Drain A I D G T =100C Current 6 A A C Pulsed Drain Current I 32 DM T =25C 2.8 A P W D A Power Dissipation T =70C 1.8 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 37 45 C/W R JA A D Steady-State Maximum Junction-to-Ambient 66 80 C/W Rev 0 : Dec 2011 www.aosmd.com Page 1 of 6 AON2408 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 20 V D GS DSS V =20V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =12V I Gate-Body leakage current 100 nA GSS DS GS V V =V , I =250A Gate Threshold Voltage 0.5 0.83 1.2 V GS(th) DS GS D I On state drain current V =4.5V, V =5V 32 A GS DS D(ON) V =4.5V, I =8A 11.6 14.5 GS D m R Static Drain-Source On-Resistance T =125C 16.3 20.5 DS(ON) J V =2.5V, I =4A 15 19 m GS D V =5V, I =8A g Forward Transconductance 50 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.65 1 V S GS SD I Maximum Body-Diode Continuous Current 3.5 A S DYNAMIC PARAMETERS C Input Capacitance 782 pF iss V =0V, V =10V, f=1MHz C Output Capacitance 158 pF oss GS DS C Reverse Transfer Capacitance 98 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.4 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 7 nC g V =4.5V, V =10V, I =8A Q Gate Source Charge 1 nC gs GS DS D Q Gate Drain Charge 2.4 nC gd t Turn-On DelayTime 3 ns D(on) t Turn-On Rise Time V =4.5V, V =10V, R =1.25, 4.5 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 2288 nnss D(off) GEN t Turn-Off Fall Time 6 ns f t I =8A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 11 ns Q I =8A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 2.7 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. JA A The Power dissipation P is based on R t 10s value and the maximum allowed junction temperature of 150 C. The value in any DSM JA given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Dec. 2011 www.aosmd.com Page 2 of 6