A25L080 Series 8Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors Document Title 8Mbit, Low Voltage, Serial Flash Memory with 100MHz Uniform 4KB Sectors Revision History Rev. No. History Issue Date Remark 1.0 Initial issue April 10, 2009 Final 1.1 Add packing description in Part Numbering Scheme May 4, 2010 1.2 October 20, 2010 P28: Change Data Retention and Endurance value from Max. to Min. 1.3 P.31: Change tW, tPP, tSE, tBE and tCE values August 29, 2011 1.4 P1: Add Provide 64Bytes Security ID (application note is available September 20, 2011 by request) in Features 1.5 Change tSE(typ.) from 0.15s to 0.08s November 15, 2011 Change tSE(max.) from 0.28s to 0.2s Change tBE(typ,) from 0.7s to 0.5s Add 8-pin WSON (6*5mm) package type 1.6 P29: Change ICC6(max.) from 15mA to 25mA March 29, 2012 (March, 2012, Version 1.6) AMIC Technology Corp. A25L080 Series 8Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors FEATURES Family of Serial Flash Memories Electronic Signatures - A25L080: 8M-bit /1M-byte - JEDEC Standard Two-Byte Signature Flexible Sector Architecture with 4KB sectors A25L080: (3014h) - Sector Erase (4K-bytes) in 80ms (typical) - RES Instruction, One-Byte, Signature, for backward - Block Erase (64K-bytes) in 500ms (typical) compatibility Page Program (up to 256 Bytes) in 1.5ms (typical) A25L080 (13h) 2.7 to 3.6V Single Supply Voltage Package options SPI Bus Compatible Serial Interface - 8-pin SOP (150/209mil), 8-pin DIP (300mil) or 8-pin WSON 100MHz Clock Rate (maximum) (6*5mm) - All Pb-free (Lead-free) products are RoHS compliant Provide 64Bytes Security ID (application note is available by request) GENERAL DESCRIPTION The A25L080 is 8M bit Serial Flash Memory, with advanced sectors. Each sector is composed of 16 pages. Each page is write protection mechanisms, accessed by a high speed 256 bytes wide. Thus, the whole memory can be viewed as SPI-compatible bus. consisting of 4096 pages, or 1048,576 bytes. The memory can be programmed 1 to 256 bytes at a time, The whole memory can be erased using the Chip Erase using the Page Program instruction. instruction, a block at a time, using Block Erase instruction, or a The memory is organized as 16 blocks, each containing 16 sector at a time, using the Sector Erase instruction. Pin Configurations SOP8 Connections DIP8 Connections WSON8 Connections A25L080 A25L080 A25L080 V V 1 8 S S CC V 1 8 CC S 1 8 CC DO DO 2 7 HOLD 2 7 HOLD DO 2 7 HOLD 3 6 C 3 6 C W W C 3 6 W V V 4 5 DIO 4 5 DIO SS V SS 4 5 DIO SS (March, 2012, Version 1.6) 1 AMIC Technology Corp.