Data Sheet AFBR-S4N66C013 NUV-HD Single Silicon Photo Multiplier Description Features The Broadcom AFBR-S4N66C013 is a single silicon photo High PDE of more than 55% at 420 nm multiplier (SiPM) used for ultra-sensitive precision Excellent SPTR and CRT measurement of single photons. The active area is 6.0 Excellent uniformity of breakdown voltage, 210 mV 2 6.0 mm . High packing density of the single chips is (3 sigma) achieved using through-silicon-via (TSV) technology and a Excellent uniformity of gain chip sized package (CSP). Larger areas can be covered by With TSV technology (4-side tilable, with high fill tiling multiple AFBR-S4N66C013 CSPs almost without any factors) 2 edge losses. The protective layer is made by a glass highly Size 6.14 6.14 mm transparent down to UV wavelengths, resulting in a broad 2 Cell pitch 30 30 m response in the visible light spectrum with high sensitivity Highly transparent glass protection layer towards blue- and near-UV region of the light spectrum. The Chip sized package (CSP) AFBR-S4N66C013 SiPM is best suited for the detection of Operating temperature range from 40C to +85C low-level pulsed light sources, especially for detection of RoHS and REACH compliant Cherenkov- or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for Applications example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr). This X-ray and gamma ray detection product is lead free and compliant with RoHS. Gamma ray spectroscopy Safety and security Block Diagram Nuclear medicine Figure 1: AFBR- S4N66C013 Block Diagram Positron emission tomography Life sciences Flow cytometry Fluorescence luminescence measurements Time correlated single photon counting High energy physics Astrophysics Broadcom AFBR-S4N66C013-DS103 December 22, 2021AFBR-S4N66C013 Data Sheet NUV-HD Single Silicon Photo Multiplier Pad Layout and Soldering Ball Geometry Figure 2: Rear View and Cross Sections Back side view 0.59 6.14 0.05 0.3 0.57 1 1 1 1 1 Sensor surface C 2 C 1 C 6 A 1 RDL surface C 5 A 2 Glass surface C 4 C 3 NOTES: 1) Dimensions are in millimeters. 2) Nominal values rounded to two decimal places - Suppression of following zeros. A is for anode, C is for cathode. All cathode balls (C 1 to C 6) are connected together. All anodes (A 1 and A 2) are connected together. Unlabeled balls are floating, preferred electrical connection to cathode voltage. Reflow Soldering Diagram Figure 3: Recommended Reflow Soldering Profile 300300 C C max 245 Cmax 245 C 250250 217 C liquidus217 C liquidusq 200200 115050 ppre-heatre-heat soaksoak rrefloweflow 110000 5050 90...120s90...120s < 1 K< 1 K/s/s 00 00 5500 110000 150150 200200 250250 300300 350350 400400 s s Broadcom AFBR-S4N66C013-DS103 2 1 1 1 1 1 0.57 0.36