MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifi er Data Sheet Description Features Avago Technologies MGA-634P8 is an economical, easy- Ultra Low noise Figure to-use GaAs MMIC Low Noise Amplifi er (LNA). The LNA High linearity performance has low noise and high linearity achieved through the 1 GaAs E-pHEMT Technology use of Avago Technologies proprietary 0.25um GaAs 3 Low cost small package size: 2.0x2.0x0.75 mm Enhancement-mode pHEMT process. It is housed in a 3 miniature 2.0 x 2.0 x 0.75mm 8-pin Quad-Flat-Non-Lead Excellent uniformity in product specifi cations (QFN) package. It is designed for optimum use from 1.5 Tape-and-Reel packaging option available GHz up to 2.3 GHz. The compact footprint and low profi le coupled with low noise, high gain and high linearity make Specifi cations the MGA-634P8 an ideal choice as a low noise amplifi er for 1.9 GHz 5V, 48mA cellular infrastructure for GSM and CDMA. For optimum performance at lower frequency from 450MHz up to 17.4 dB Gain 1.5GHz, MGA-633P8 is recommended. For optimum per- 0.44 dB Noise Figure formance at higher frequency from 2.3GHz up to 4GHz, 15.5 dB Input Return Loss MGA-635P8 is recommended. All these 3 products, MGA- 36 dBm Output IP3 633P8, MGA-634P8 and MGA-635P8 share the same package and pinout confi guration. 21 dBm Output Power at 1dB gain compression Pin Confi guration and Package Marking Applications 3 Low noise amplifi er for cellular infrastructure for GSM 2.0 x 2.0 x 0.75 mm 8-lead QFN TDS-CDMA, and CDMA. 1 8 8 1 Other ultra low noise application. 7 7 2 2 Simplifi ed Schematic 34X 6 3 6 3 5 4 Vdd 5 4 Rbias Top View Bottom View C6 Pin 1 Vbias Pin 5 Not Used R1 C5 R2 Pin 2 RFinput Pin 6 Not Used Pin 3 Not Used Pin 7 RFoutput/Vdd C4 C3 Pin 4 Not Used Pin 8 Not Used L1 L2 Centre tab - Ground Note: 1 8 bias RFin C1 C2 RFout Package marking provides orientation and identifi cation 2 7 34 = Device Code, where X is the month code. 3 6 4 5 Attention: Observe precautions for handling electrostatic sensitive devices. Notes: ESD Machine Model = 70 V (Class A) The schematic is shown with the assumption that similar PCB is used for all MGA-633P8, MGA-634P8 and MGA-635P8. ESD Human Body Model = 500 V (Class 1B) Detail of the components needed for this product is shown in Table 1. Refer to Avago Application Note A004R: Enhancement mode technology employs positive gate voltage, Electrostatic Discharge, Damage and Control. thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. Good RF practice requires all unused pins to be earthed. 1 Absolute Maximum Rating T =25C Thermal Resistance A 3 Symbol Parameter Units Absolute Maximum Thermal Resistance (V = 5.0V, I = 50mA) dd dd Device Voltage, V 5.5 V dd = 62C/W jc RF output to ground Notes: V Gate Voltage V 0.7 bias 1. Operation of this device in excess of any of these limits may cause permanent damage. P CW RF Input Power dBm +20 in,max 2. Power dissipation with device turned on. (V = 5.0V, I = 50 mA) dd d Board temperature T is 25C. Derate at B 2 16mW/C for T >119C. P Total Power Dissipation W 0.5 B diss 3. Thermal resistance measured using Infra-Red T Junction Temperature C 150 j Measurement Technique T Storage Temperature C -65 to 150 stg 1 , 4 Electrical Specifi cations RF performance at T = 25C, V = 5V, R = 5.6 kOhm, 1.9 GHz, measured on demo board in Figure 1 with component A dd bias listed in Table 1 for 1.9 GHz matching. Symbol Parameter and Test Condition Units Min. Typ. Max. I Drain Current mA 37 48 61 dd GainGain dB16.117.419.1 2 OIP3 Output Third Order Intercept Point dBm 33 36 3 NF Noise Figure dB 0.44 0.69 OP1dB Output Power at 1dB Gain Compression dBm 21 IRL Input Return Loss, 50 source dB 15.5 ORL dB 13 Output Return Loss, 50 load REV ISOL Reverse Isolation dB 30 Notes: 1. Measurements at 1.9 GHz obtained using demo board described in Figure 1. 2. OIP3 test condition: F = 1.9 GHz, F = 1.901 GHz with input power of -10dBm per tone. RF1 RF2 3. For NF data, board losses of the input have not been de-embedded. 4. Use proper bias, heatsink and derating to ensure maximum device temperature is not exceeded. See absolute maximum ratings and application note for more details. 2