DB105G thru DB107G V = 600 V - 1000 V RRM Single Phase Glass Passivated I = 1 A O Silicon Bridge Rectifier Features Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique DB Package High surge current capability Small size, simple installation Types from 600 V up to 1000 V V RRM Not ESD Sensitive Mechanical Data Case: Molded plastic Terminals: Plated terminals, solderable per MIL-STD- 202, Method 208 Polarity: Polarrity symbols marked on the body Mounting position: Any Maximum ratings at Tc = 25 C, unless otherwise specified Conditions DB107G Parameter Symbol DB105G DB106G Unit V 1000 Repetitive peak reverse voltage 600 800 V RRM V RMS reverse voltage 420 560 700 V RMS V 1000 DC blocking voltage 600 800 V DC T -55 to 150 Operating temperature -55 to 150 -55 to 150 C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 C stg Electrical characteristics at Tc = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Conditions DB105G DB106G DB107G Unit Maximum average forward I T = 40 C 1.0 1.0 1.0 A O a rectified current I t = 8.3 ms, half sine Peak forward surge current 30 30 30 A FSM p Maximum instantaneous forward V I = 1.0 A 1.1 1.1 1.1 V F F voltage drop T = 25 C 5 5 5 Maximum DC reverse current at a I A R rated DC blocking voltage T = 125 C 500 500 500 a C 25 25 25 pF Typical junction capacitance j R Typical thermal resistance 20 20 20 C/W JC 1 Oct. 2018 DB105G thru DB107G 2 Oct. 2018