X-On Electronics has gained recognition as a prominent supplier of HT2301ARTZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. HT2301ARTZ MOSFETs are a product manufactured by HTCSEMI. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

HT2301ARTZ HTCSEMI

HT2301ARTZ electronic component of HTCSEMI
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See Product Specifications
Part No.HT2301ARTZ
Manufacturer: HTCSEMI
Category: MOSFETs
Description: 20V 3.5A 1W 64mΩ@4.5V,3.5A 0.7V@250uA 55pF@10V P Channel 405pF@10V 3.3nC@2.5V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
Datasheet: HT2301ARTZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.066 ea
Line Total: USD 0.66 
Availability - 659
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
659
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 10
Multiples : 10
10 : USD 0.066
100 : USD 0.0547
300 : USD 0.0489
3000 : USD 0.0389
6000 : USD 0.0354
9000 : USD 0.0337

   
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We are delighted to provide the HT2301ARTZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HT2301ARTZ and other electronic components in the MOSFETs category and beyond.

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The HTCSEMI HT2301ARTZ is a P channel metal oxide semiconductor field effect transistor (MOSFET). It has a maximum power rating of 1 watt, a drain-source voltage of 20 volts, and drain-source current of 3.5 amps. It has a low on-state resistance of 64 mOhms at 4.5 volts, a threshold voltage of 0.7 Volts at 250 microamps, and a gate-source capacitance of 405 picofarads at 10 volts. Its body capacitance is 3.3 nanocoulombs at 2.5 volts. It operates over a wide temperature range from -55°C to 150°C with a thermal junction (Tj) temperature. It comes in a very small and compact SOT-23 package and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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