MRF151G RF Power Field-Effect Transistor Rev. V1 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET Features Package Outline Guaranteed Performance at 175 MHz, 50 V: Output Power 300 W Gain 14 dB (16 dB Typ) Efficiency 50% Low Thermal Resistance 0.3 5C/W Ruggedness Tested at Rated Output Power Nitride Passivated Die for Enhanced Reliability Description and Applications Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MRF151G RF Power Field-Effect Transistor Rev. V1 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: