Features Single 2.7V - 3.6V Supply Serial Peripheral Interface (SPI) Compatible Supports SPI Modes 0 and 3 70 MHz Maximum Clock Frequency Flexible, Uniform Erase Architecture 4-Kbyte Blocks 32-Kbyte Blocks 64-Kbyte Blocks 16-megabit Full Chip Erase Individual Sector Protection with Global Protect/Unprotect Feature 2.7-volt Only Thirty-two 64-Kbyte Physical Sectors Hardware Controlled Locking of Protected Sectors Serial Firmware Flexible Programming Options Byte/Page Program (1 to 256 Bytes) DataFlash Sequential Program Mode Capability Automatic Checking and Reporting of Erase/Program Failures Memory JEDEC Standard Manufacturer and Device ID Read Methodology Low Power Dissipation 5 mA Active Read Current (Typical) AT26DF161A 10 A Deep Power-down Current (Typical) Endurance: 100,000 Program/Erase Cycles Data Retention: 20 Years Complies with Full Industrial Temperature Range For New Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options Designs Use 8-lead SOIC (150-mil and 208-mil wide) 8-pad MLF (6 x 5 x 1.00 mm) AT25DF161 1. Description The AT26DF161A is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer-based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT26DF161A, with its erase granularity as small as 4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices. The physical sectoring and the erase block sizes of the AT26DF161A have been opti- mized to meet the needs of todays code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows addi- tional code routines and data storage segments to be added while still maintaining the same overall device density. 3640DDFLASH8/09The AT26DF161A also offers a sophisticated method for protecting individual sectors against erroneous or malicious program and erase operations. By providing the ability to individually pro- tect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applica- tions where program code is patched or updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. In addition to individual sector protection capabili- ties, the AT26DF161A incorporates Global Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at once. This reduces overhead during the manufacturing process since sectors do not have to be unprotected one-by-one prior to initial programming. Specifically designed for use in 3-volt systems, the AT26DF161A supports read, program, and erase operations with a supply voltage range of 2.7V to 3.6V. No separate voltage is required for programming and erasing. 2 AT26DF161A 3640DDFLASH8/09