X-On Electronics has gained recognition as a prominent supplier of DN3765K4-G mosfet across the USA, India, Europe, Australia, and various other global locations. DN3765K4-G mosfet are a product manufactured by Microchip. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

DN3765K4-G Microchip

DN3765K4-G electronic component of Microchip
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See Product Specifications
Part No.DN3765K4-G
Manufacturer: Microchip
Category:MOSFET
Description: Transistor: N-MOSFET; unipolar; 650V; 0.2A; 2.5W; TO252
Datasheet: DN3765K4-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

100: USD 3.0625 ea
Line Total: USD 306.25

Availability - 1940
Ships to you between
Fri. 07 Jun to Thu. 13 Jun
MOQ: 100  Multiples: 100
Pack Size: 100
Availability Price Quantity
1940 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 100
Multiples : 100
100 : USD 3.0625
250 : USD 3.05
500 : USD 3.025
2000 : USD 3
4000 : USD 2.9875
6000 : USD 2.9625
8000 : USD 2.9375
10000 : USD 2.9125

1255 - WHS 2


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 3.7835
25 : USD 3.174
100 : USD 2.9785

1940 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 100
Multiples : 100
100 : USD 4.1908

3860 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 3
Multiples : 1
3 : USD 3.8285
10 : USD 3.8129
25 : USD 3.7973
100 : USD 3.7804
250 : USD 3.7648
500 : USD 3.7492
1000 : USD 3.7323
3000 : USD 3.7167

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the DN3765K4-G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN3765K4-G and other electronic components in the MOSFET category and beyond.

Supertex inc. DN3765 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and Supertexs well- Low input capacitance proven silicon-gate manufacturing process. This combination Fast switching speeds produces a device with the power handling capabilities of Low on-resistance bipolar transistors and with the high input impedance and Free from secondary breakdown positive temperature coefficient inherent in MOS devices. Low input and output leakage Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary Applications breakdown. Normally-on switches Solid state relays Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where Linear amplifiers high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Constant current sources Telecom Ordering Information Product Summary Part Number Package Option Packing BV /BV R (max) I (min) DSX DGX DS(ON) DSS DN3765K4-G TO-252 (D-PAK) 2000/Reel 650V 8.0 200mA -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Pin Configuration Absolute Maximum Ratings DRAIN Parameter Value Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX SOURCE Gate-to-source voltage 20V GATE O O Operating and storage temperature -55 C to +150 C O TO-252 (D-PAK) Maximum junction temperature 150 C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All Product Marking voltages are referenced to device ground. YY = Year Sealed Si YYWW WW = Week Sealed DN3765 Typical Thermal Resistance L = Lot Number LLLLLLL = Green Packaging Package ja O Package may or may not include the following marks: Si or TO-252 (D-PAK) 81 C/W TO-252 (D-PAK) Doc. DSFP-DN3765 Supertex inc. A070113 www.supertex.comDN3765 Thermal Characteristics I I Power Dissipation D D Package I I O DR DRM (continuous) (pulsed) T = 25 C A TO-252 (D-PAK) 300mA 500mA 2.5W 300mA 500mA Notes: O I (continuous) is limited by max rated T of 150 C. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 650 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 25V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 25V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = -10V, V = Max Rating GS DS I Drain-to-source leakage current V = -10V, V = 0.8 Max Rating, D(OFF) GS DS - - 1.0 mA T = 125C A I Saturated drain-to-source current 200 - - mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - - 8.0 V = 0V, I = 150mA DS(ON) GS D O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 150mA DS(ON) DS(ON) GS D G Forward transductance 100 - - mmho I = 100mA, V = 10V FS D DS C Input capacitance - - 825 ISS V = -10V, GS C Common source output capacitance - - 190 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 110 RSS t Turn-on delay time - - 50 d(ON) V = 25V, DD t Rise time - - 75 r I = 150mA, ns D t Turn-off delay time - - 75 d(OFF) R = 25 GEN t Fall time - - 100 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 200mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 200mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V VDD 90% INPUT Pulse R L 10% Generator -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) f VDD INPUT D.U.T. 10% 10% OUTPUT 90% 90% 0V Doc. DSFP-DN3765 Supertex inc. A070113 2 www.supertex.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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