BAS19-TP Micro Commercial Components (MCC)

BAS19,BAS20,BAS21 Features Ideally Suited For Automatic Insertion Fast Switching Speed 350mW Epitaxial Planar Die Construction Halogen Free. Green Device (Note 1) Small Moisture Sensitivity Level 1 Signal Diodes Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Mechanical Data Weight: 0.008 Grams ( Approx.) Maximum Ratings SOT-23 Operating Junction Temperature Range: -65C to +150C Storage Temperature Range: -65C to +150C A Thermal Resistance: 357C/W Junction to Ambient D Repetitive Continuous Reverse Peak Reverse MCC Device B C Voltage Voltage Part Number Marking V R V RRM F E BAS19 JP 120V 120V 200V BAS20 JR 200V G H J BAS21 JS 250V 250V L K Average Rectified I 225mA (Note 2) DIMENSIONS F(AV) Forward Current INCHES MM DIM NOTE Forward continuous MIN MAX MIN MAX I 400mA T =25 (Note 2) FM A current A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 Non-repetitive 9.0A t=1s C 0.047 0.055 1.20 1.40 Peak 2.0A 1/2 Cycle, Sine I D 0.034 0.041 0.85 1.05 FSM Forward Surge Wave, 60 Hz E 0.067 0.083 1.70 2.10 0.5A t=1s Current F 0.018 0.024 0.45 0.60 Repetitive Peak G 0.01 0.15 0.0004 0.006 I 625mA FRM Forward Curren H 0.035 0.043 0.90 1.10 Power J 0.003 0.007 0.08 0.18 P 350mW TOT T =25 A K 0.014 0.020 0.35 0.51 Dissipation L 0.007 0.020 0.20 0.50 Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, Suggested Solder Pad Layout <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 2. Mounted on FR-4 board with recommended pad layout. 0.031 0.800 Internal Structure 0.035 0.900 0.079 inches 2.000 mm 0.037 0.950 0.037 0.950 Rev.3-5-10252021 1/4 MCCSEMI.COMBAS19,BAS20,BAS21 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Conditions Symbol Min. Typ. Max. Units I =100mA 1 V F Forward Voltage V F I =200mA 1.25 V F V =V 100 nA R Rmax Reverse Current I R V =V , T =150C 100 A R Rmax J Dynamic Forward Resistance r I =100mA 5 f F V = 0V, f = 1MHz Junction Capacitance C 5 pF R J I =I =30mA, F R Reverse Recovery Time t 50 ns rr I =0.1I ,R =100 rr R L Rev.3-5-10252021 2/4 MCCSEMI.COM