X-On Electronics has gained recognition as a prominent supplier of M29W400DB70N6E NOR Flash across the USA, India, Europe, Australia, and various other global locations. M29W400DB70N6E NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

M29W400DB70N6E Micron

M29W400DB70N6E electronic component of Micron
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Part No.M29W400DB70N6E
Manufacturer: Micron
Category: NOR Flash
Description: Flash Memory STD FLASH 4 MEG
Datasheet: M29W400DB70N6E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
576: USD 1.4277 ea
Line Total: USD 822.36 
Availability - 0
MOQ: 576  Multiples: 576
Pack Size: 576
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.4788

0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 576
Multiples : 576
576 : USD 1.4277

   
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We are delighted to provide the M29W400DB70N6E from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the M29W400DB70N6E and other electronic components in the NOR Flash category and beyond.

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M29W400DT M29W400DB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages V = 2.7V to 3.6V for Program, Erase CC and Read ACCESS TIME: 45, 55, 70ns PROGRAMMING TIME 10s per Byte/Word typical 11 MEMORY BLOCKS 1 Boot Block (Top or Bottom Location) SO44 (M) 2 Parameter and 8 Main Blocks PROGRAM/ERASE CONTROLLER Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES Read and Program another Block during Erase Suspend UNLOCK BYPASS PROGRAM COMMAND TSOP48 (N) Faster Production/Batch Programming 12 x 20mm TEMPORARY BLOCK UNPROTECTION MODE LOW POWER CONSUMPTION Standby and Automatic Standby FBGA 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE Manufacturer Code: 0020h TFBGA48 (ZA) Top Device Code M29W400DT: 00EEh 6 x 9mm Bottom Device Code M29W400D: 00EFh PACKAGES Compliant with Lead-Free Soldering Processes FBGA Lead-Free Versions TFBGA48 (ZE) 6 x 8mm June 2004 1/38M29W400DT, M29W400DB TABLE OF CONTENTS FEATURES SUMMARY . 1 Figure 1. Packages 1 SUMMARY DESCRIPTION . 5 Figure 2. Logic Diagram 5 Table 1. Signal Names 5 Figure 3. SO Connections . 6 Figure 4. TSOP Connections 6 Figure 5. TFBGA Connections (Top view through package) 7 Figure 6. Block Addresses (x8) . 8 Figure 7. Block Addresses (x16) 9 SIGNAL DESCRIPTIONS . 10 Address Inputs (A0-A17) . 10 Data Inputs/Outputs (DQ0-DQ7) . 10 Data Inputs/Outputs (DQ8-DQ14) 10 Data Input/Output or Address Input (DQ15A-1) 10 Chip Enable (E) 10 Output Enable (G) 10 Write Enable (W) . 10 Reset/Block Temporary Unprotect (RP) 10 Ready/Busy Output (RB) . 10 Byte/Word Organization Select (BYTE) 10 V Supply Voltage . 10 CC VSS Ground . 10 BUS OPERATIONS 11 Bus Read . 11 Bus Write . 11 Output Disable . 11 Standby 11 Automatic Standby 11 Special Bus Operations 11 Electronic Signature . 11 Block Protection and Blocks Unprotection 11 Table 2. Bus Operations, BYTE = V 12 IL Table 3. Bus Operations, BYTE = V 12 IH COMMAND INTERFACE . 13 Read/Reset Command . 13 Auto Select Command . 13 Program Command . 13 Unlock Bypass Command 13 2/38

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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