MT18KBZS1G72AKZ-1G6E2

8GB (x72, ECC, DR) 244-Pin DDR3L ULP Mini-UDIMM Features 1.35V DDR3L SDRAM ULP Mini-UDIMM MT18KBZS1G72AKZ 8GB Figure 1: 244-Pin ULP Mini-UDIMM (R/C F) Features 244-pin, ultra low profile (17.9mm), mini unbuffered Module height: 17.9mm (0.705in) dual in-line, 82mm, memory module (ULP Mini- UDIMM) DDR3L functionality and operations supported as defined in the component data sheet Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 Options Marking 8GB (1 Gig x 72) Operating temperature V = 1.35V (1.2831.45V) DD Commercial (0C T +70C) None A V = 1.5V (1.4251.575V) DD Package Backward compatible to V = 1.5V 0.075V DD 244-pin DIMM (halogen-free) Z Supports ECC error detection and correction Frequency/CAS latency 1.25ns CL = 11 (DDR3-1600) -1G6 Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Dual rank, using 8Gb TwinDie devices 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM 8 internal device banks Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Full module heat spreader Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 11 CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef84c35c80 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 kbs18c1gx72akz.pdf - Rev. D 5/13 EN 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.8GB (x72, ECC, DR) 244-Pin DDR3L ULP Mini-UDIMM Features Table 2: Addressing Parameter 8GB Refresh count 8K Row address 64K A 15:0 Device bank address 8 BA 2:0 Device configuration 8Gb TwinDie (1 Gig x 8) Column address 1K A 9:0 Module rank address 2 S 1:0 Table 3: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT41K1G8, 8Gb TwinDie 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT18KBZS1G72AKZ-1G6 8GB 1 Gig x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 Notes: 1. The data sheet for the base device can be found on Microns web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT18KBZS1G72AKZ-1G6E1. PDF: 09005aef84c35c80 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 kbs18c1gx72akz.pdf - Rev. D 5/13 EN 2012 Micron Technology, Inc. All rights reserved.