X-On Electronics has gained recognition as a prominent supplier of MT42L128M32D1GU-25 WT:A DRAM across the USA, India, Europe, Australia, and various other global locations. MT42L128M32D1GU-25 WT:A DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT42L128M32D1GU-25 WT:A Micron

MT42L128M32D1GU-25 WT:A electronic component of Micron
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Part No.MT42L128M32D1GU-25 WT:A
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip Mobile LPDDR2 SDRAM 4Gbit 128Mx32 1.8V 134-Pin FBGA
Datasheet: MT42L128M32D1GU-25 WT:A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 11.4989 ea
Line Total: USD 46 
Availability - 0
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 4
Multiples : 1
4 : USD 11.4989
10 : USD 10.906
25 : USD 10.4688
50 : USD 10.3295
100 : USD 10.0841

   
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RoHS - XON
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Access Time
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Address Bus
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Rad Hardened
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We are delighted to provide the MT42L128M32D1GU-25 WT:A from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT42L128M32D1GU-25 WT:A and other electronic components in the DRAM category and beyond.

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4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4, MT42L384M32D3 Options Marking Features V : 1.2V L DD2 Ultra low-voltage core and I/O power supplies Configuration V = 1.141.30V DD2 32 Meg x 16 x 8 banks x 1 die 256M16 V /V = 1.141.30V DDCA DDQ 16 Meg x 32 x 8 banks x 1 die 128M32 V = 1.701.95V DD1 16 Meg x 32 x 8 banks x 2 die 256M32 Clock frequency range 1 (16 Meg x 32 x 8 banks) + 2 (32 384M32 53310 MHz (data rate range: 106620 Mb/s/pin) Meg x 16 x 8 banks) Four-bit prefetch DDR architecture 32 Meg x 16 x 8 banks x 4 die 512M32 Eight internal banks for concurrent operation 16 Meg x 32 x 8 banks x 2 die 128M64 Multiplexed, double data rate, command/address 16 Meg x 32 x 8 banks x 3 die 192M64 inputs commands entered on every CK edge 16 Meg x 32 x 8 banks x 4 die 256M64 Bidirectional/differential data strobe per byte of Device type data (DQS/DQS ) LPDDR2-S4, 1 die in package D1 Programmable READ and WRITE latencies (RL/WL) LPDDR2-S4, 2 die in package D2 Programmable burst lengths: 4, 8, or 16 LPDDR2-S4, 3 die in package D3 Per-bank refresh for concurrent operation LPDDR2-S4, 4 die in package D4 On-chip temperature sensor to control self refresh FBGA green package rate 134-ball FBGA (10mm x GU, GV Partial-array self refresh (PASR) 11.5mm) Deep power-down mode (DPD) 168-ball FBGA (12mm x 12mm) LF, LG Selectable output drive strength (DS) 216-ball FBGA (12mm x 12mm) LH, LK, LL, LM, Clock stop capability LP RoHS-compliant, green packaging 220-ball FBGA (14mm x 14mm) LD, MP 240-ball FBGA (14mm x 14mm) MC 253-ball FBGA (11mm x 11mm) EU, EV Table 1: Key Timing Parameters Timing cycle time 1.875ns RL = 8 -18 Speed Clock Rate Data Rate t t 1 2.5ns RL = 6 -25 Grade (MHz) (Mb/s/pin) RL WL RCD/ RP 3.0ns RL = 5 -3 -18 533 1066 8 4 Typical Operating temperature range -25 400 800 6 3 Typical From 30C to +85C WT -3 333 667 5 2 Typical From 40C to +105C AT Revision :A t t 1. For Fast RCD/ RP, contact factory. Note: PDF: 09005aef84427aab Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 4gb mobile lpddr2 s4 u80m.pdf - Rev. O 08/13 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Table 2: Single Channel S4 Configuration Addressing Architecture 256 Meg x 16 128 Meg x 32 256 Meg x 32 384 Meg x 32 512 Meg x 32 Die CS0 32 Meg x 16 x 8 16 Meg x 32 x 8 16 Meg x 32 x 8 16 Meg x 32 x 8 32 Meg x 16 x 8 configuration banks banks banks banks banks CS1 n/a n/a 16 Meg x 32 x 8 32 Meg x 32 x 8 32 Meg x 16 x 8 banks banks banks Row addressing 16K (A 13:0 ) 16K (A 13:0 ) 16K (A 13:0 ) 16K (A 13:0 ) 16K (A 13:0 ) Column CS0 2K (A 10:0 ) 1K (A 9:0 ) 1K (A 9:0 ) 1K (A 9:0 ) 2K (A 10:0 ) addressing CS1 n/a n/a 1K (A 9:0 ) 2K (A 10:0 ) 2K (A 10:0 ) Number of die 1 1 2 3 4 Die per rank CS0 1 1 1 1 2 CS1 0 0 1 2 2 1 Ranks per channel 11222 Note: 1. A channel is a complete LPDRAM interface, including command/address and data pins. Table 3: Dual Channel S4 Configuration Addressing Architecture 128 Meg x 64 192 Meg x 64 256 Meg x 64 Die configuration 16 Meg x 32 x 8 banks 16 Meg x 32 x 8 banks 16 Meg x 32 x 8 banks Row addressing 16K (A 13:0 ) 16K (A 13:0 ) 16K (A 13:0 ) Column addressing CS0 1K (A 9:0 ) 1K (A 9:0 ) 1K (A 9:0 ) CS1 n/a 1K (A 9:0 ) 1K (A 9:0 ) Number of die 2 3 4 Die per rank CS0 1 1 1 CS1 0 1 = Channel A 1 0 = Channel B 1 Ranks per channel Channel A 1 2 2 Channel B 1 1 2 Note: 1. A channel is a complete LPDRAM interface, including command/address and data pins. PDF: 09005aef84427aab Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 4gb mobile lpddr2 s4 u80m.pdf - Rev. O 08/13 EN 2011 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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