X-On Electronics has gained recognition as a prominent supplier of MT47H64M8SH-25E AAT:H TR dram across the USA, India, Europe, Australia, and various other global locations. MT47H64M8SH-25E AAT:H TR dram are a product manufactured by Micron. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

MT47H64M8SH-25E AAT:H TR Micron

MT47H64M8SH-25E AAT:H TR electronic component of Micron
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Part No.MT47H64M8SH-25E AAT:H TR
Manufacturer: Micron
Category:DRAM
Description: DRAM DDR2 512M 64MX8 FBGA
Datasheet: MT47H64M8SH-25E AAT:H TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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1 : USD 7.1402
25 : USD 4.7441
50 : USD 4.7014
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We are delighted to provide the MT47H64M8SH-25E AAT:H TR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT47H64M8SH-25E AAT:H TR and other electronic components in the DRAM category and beyond.

512Mb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H64M8 16 Meg x 8 x 4 banks MT47H32M16 8 Meg x 16 x 4 banks 1 Options Marking Features Configuration V = 1.8V 0.1V, V = 1.8V 0.1V DD DDQ 64 Meg x 8 (16 Meg x 8 x 4 banks) 64M8 JEDEC-standard 1.8V I/O (SSTL 18-compatible) 32 Meg x 16 (8 Meg x 16 x 4 banks) 32M16 Differential data strobe (DQS, DQS ) option FBGA package (Pb-free) x16 84-ball FBGA (8mm x 12.5mm) Rev. H NF 4n-bit prefetch architecture FBGA package (Pb-free) x8 Duplicate output strobe (RDQS) option for x8 60-ball FBGA (8mm x 10mm) Rev. H SH DLL to align DQ and DQS transitions with CK Timing cycle time 4 internal banks for concurrent operation 2.5ns CL = 5 (DDR2-800) -25E Programmable CAS latency (CL) 2.5ns CL = 6 (DDR2-800) -25 Posted CAS additive latency (AL) 3.0ns CL = 4 (DDR2-667) -3E t 3.0ns CL = 5 (DDR2-667) -3 WRITE latency = READ latency - 1 CK Special options Selectable burst lengths: 4 or 8 Standard None Adjustable data-output drive strength Automotive grade A 64ms, 8192-cycle refresh Operating temperature On-die termination (ODT) Industrial (40C T +95C IT C RoHS-compliant 40C T +85C) A Automotive (40C T +105C) AT Supports JEDEC clock jitter specification C Revision :H AEC-Q100 1. Not all options listed can be combined to PPAP submission Note: define an offered product. Use the Part 8D response time Catalog Search on www.micron.com for product offerings and availability. PDF: 09005aef859d78b5 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 512MbDDR2 automotive.pdf - Rev. C 06/18 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.512Mb: x8, x16 Automotive DDR2 SDRAM Features Table 1: Key Timing Parameters Data Rate (MT/s) t Speed Grade CL = 3 CL = 4 CL = 5 CL = 6 CL = 7 RC (ns) -25E 400 533 800 800 n/a 55 -25 400 533 667 800 n/a 55 -3E 400 667 667 n/a n/a 54 -3 400 533 667 n/a n/a 55 Table 2: Addressing Parameter 64 Meg x 8 32 Meg x 16 Configuration 16 Meg x 8 x 4 banks 8 Meg x 16 x 4 banks Refresh count 8K 8K Row address A 13:0 (16K) A 12:0 (8K) Bank address BA 1:0 (4) BA 1:0 (4) Column address A 9:0 (1K) A 9:0 (1K) Figure 1: 512Mb DDR2 Part Numbers MT 47 H 32M16 NF -25E A IT :H Micron Technology Design Revision :H = Design generation Product Family 47 = DDR SDRAM Operating Temperature IT = Industrial (40C to +85C) Operating Voltage AT = Automotive (40C to +105C) H = 1.8V V CMOS DD Special Options Configuration (depth, width) (Multiple processing codes are separated 64 Meg x 8 = 64M8 by a space and are listed in hierarchical order.) 32 Meg x 16 = 32M16 Blank = None A = Automotive 1 Package Codes Pb-free Speed Grade t NF = 84-ball 8mm x 12.5mm FBGA -3 = 3ns CK, CL = 5 t SH = 60-ball 8mm x 10.00mm FBGA -3E = 3ns CK, CL = 4 t -25 = 2.5ns CK, CL = 6 t -25E = 2.5ns CK, CL = 5 1. Not all speeds and configurations are available in all packages. Note: PDF: 09005aef859d78b5 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 512MbDDR2 automotive.pdf - Rev. C 06/18 EN 2014 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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