X-On Electronics has gained recognition as a prominent supplier of MT51K256M32HF-60 N:B DRAM across the USA, India, Europe, Australia, and various other global locations. MT51K256M32HF-60 N:B DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT51K256M32HF-60 N:B Micron

MT51K256M32HF-60 N:B electronic component of Micron
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Part No.MT51K256M32HF-60 N:B
Manufacturer: Micron
Category: DRAM
Description: DRAM GDDR5 8G 256MX32 FBGA
Datasheet: MT51K256M32HF-60 N:B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 16.723 ea
Line Total: USD 16.72 
Availability - 7
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 16.723
30 : USD 16.1886

   
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RoHS - XON
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We are delighted to provide the MT51K256M32HF-60 N:B from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT51K256M32HF-60 N:B and other electronic components in the DRAM category and beyond.

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8Gb: x16, x32 GDDR5 SGRAM Features GDDR5 SGRAM MT51J256M32 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks Address training: Address input monitoring via DQ Features pins V = V = 1.5V 3% and 1.35V 3% DD DDQ WCK2CK clock training: Phase information via EDC Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s pins 16 internal banks Data read and write training via read FIFO (FIFO t t Four bank groups for CCDL = 3 CK depth = 6) 8n-bit prefetch architecture: 256-bit per array read Read FIFO pattern preloaded by LDFF command or write access for x32 128-bit for x16 Direct write data load to read FIFO by WRTR com- Burst length (BL): 8 only mand Programmable CAS latency: 724 Consecutive read of read FIFO by RDTR command Programmable WRITE latency: 47 Read/write data transmission integrity secured by Programmable CRC READ latency: 23 cyclic redundancy check (CRC-8) Programmable CRC WRITE latency: 814 Read/write EDC on/off mode Programmable EDC hold pattern for CDR Low power modes Precharge: Auto option for each burst access RDQS mode on EDC pin Auto refresh and self refresh modes On-die temperature sensor with readout Refresh cycles: 16,384 cycles/32ms Automatic temperature sensor controlled self Interface: Pseudo open drain (POD-15) compatible refresh rate outputs: 40 pull-down, 60 pull-up Vendor ID, FIFO depth and density info fields for On-die termination (ODT): 60 or 120 (NOM) identification ODT and output driver strength auto calibration Mirror function with MF pin with external resistor ZQ pin: 120 Boundary scan function with SEN pin Programmable termination and driver strength off- Lead-free (RoHS-compliant) and halogen-free sets packaging Selectable external or internal V for data inputs REF T = 0C to +95C C programmable offsets for internal V REF Separate external V for address/command 1 REF Options Marking inputs Organization x32/x16 mode configuration set at power-up with 256 Meg x 32 (words x bits) 256M32 EDC pin FBGA package Single-ended interface for data, address, and 170-ball (12mm x 14mm) HF command Timing maximum data rate Quarter data rate differential clock inputs CK t, 6.0 Gb/s, 5.0 Gb/s -60 CK c for address and commands 7.0 Gb/s, 6.0 Gb/s -70 Two half data rate differential clock inputs, WCK t 8.0 Gb/s, 6.0 Gb/s -80 and WCK c, each associated with two data bytes Operating temperature (DQ, DBI n, EDC) Commercial (0C T +95C) None C DDR data (WCK) and addressing (CK) Revision A SDR command (CK) Write data mask function via address bus (single/ 1. Not all options listed can be combined to Note: double byte mask) define an offered product. Use the part Data bus inversion (DBI) and address bus inversion catalog search on 8Gb: x16, x32 GDDR5 SGRAM Features Figure 1: Part Numbering MT51J 256M32 HF -80 : A Micron Memory Revision A Configuration Temperature 256M32 = 256 Meg x 32 : = Commercial Package Data Rate HF = 170-ball 12.00mm x 14.00mm FBGA -80 = 8.0 Gb/s -70 = 7.0 Gb/s -60 = 6.0 Gb/s Note: 1. This Micron GDDR5 SGRAM is available in different speed bins. The operating range and AC timings of a faster speed bin are a superset of all slower speed bins. Therefore it is safe to use a faster bin device as a drop-in replacement of a slower bin device when operated within the supply voltage and frequency range of the slower bin device. FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Microns web site:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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