MP3356 High Voltage Photo Flash Charger and IGBT Driver for DSC The Future of Analog IC T echnology DESCRIPTION FEATURES The MP3356 is a fast, highly efficient and Integrated 50V, 0.5 Power Switch precision high voltage photo-flash charger for 1.5A peak current limit DSC xenon flash. 2.5% Charge Accuracy <1uA Shutdown Current The MP3356 has a peak current of 1.5A. A Integrated IGBT Driver 50V, 0.5 internal power switch lowers transformer turns ratio and switching losses APPLICATIONS associated with the primary leakage inductance Digital Still Cameras and winding capacitance. Integrated secondary Optical Film Cameras feedback resistors provide +/-2.5% output voltage charge accuracy. MP3356 also has an MPS and The Future of Analog IC Technology are Registered Trademarks of Monolithic Power Systems, Inc. integrated IGBT driver. MP3356 is available in the 10-pin, 2X2 flip chip package. TYPICAL APPLICATION VIN GND U1 VIN SW VIN AGND FB MP3356 CHAG EN 5, 6, 7, 8 4 PG PG IGBTOUT 1, 2, 3 IGBTIN IGBTIN PGND MP3356 Rev. 0.91 www.MonolithicPower.com 1 1/29/2010 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. 2010 MPS. All Rights Reserved. MP3356 HIGH VOLTAGE PHOTO FLASH CHARGER AND IGBT DRIVER FOR DSC ORDERING INFORMATION Part Number* Package Top Marking Free Air Temperature (T ) A MP3356DG 10-pin, 2x2 Flip QFN 4PY 40 C to +85C * For Tape & Reel, add suffix Z (e.g. MP3356DGZ). For RoHS Compliant Packaging, add suffix LF (e.g. MP3356DGLFZ) PACKAGE REFERENCE TOP VIEW VIN 10 IGBTIN 1 9 VIN IGBTOUT 2 8 AGND SW 3 7 PGND PG 4 6 EN 5 FB (4) (1) Thermal Resistance JA JC ABSOLUTE MAXIMUM RATINGS 2x2 Flip Chip ...........................80 ...... 16... C/W V to AGND.......................................-0.3Vto 6V IN EN, IGBTIN, IGBTOUT, to AGND-0.3Vto 6V PG Notes: 1) Exceeding these ratings may damage the device. FB to AGND...................................-60V to 350V 2) The maximum allowable power dissipation is a function of the SW to AGND...................................-0.3V to 50V maximum junction temperature T (MAX), the junction-to- J PGND to AGND -0.3V to 0.3V ambient thermal resistance , and the ambient temperature JA T . The maximum allowable continuous power dissipation at A Storage Temperature............... -55C to +150 C any ambient temperature is calculated by P (MAX) = (T (2) D J Continuous Power Dissipation (T = +25C) A (MAX)-T )/ . Exceeding the maximum allowable power A JA ......1.6W dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal Junction Temperature............................ +150C shutdown circuitry protects the device from permanent Lead Temperature (Solder).....................+260C damage. (3) 3) The device is not guaranteed to function outside of its operating Recommended Operating Conditions conditions. Supply Voltage V .............................2.8V to 6V 4) Measured on JESD51-7, 4-layer PCB. IN Operating Junct. Temp (T )..... 40 C to +125 C J MP3356 Rev. 0.91 www.MonolithicPower.com 2 1/29/2010 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. 2010 MPS. All Rights Reserved.