LXES2SBBB4-026

Silicon ESD protection device LXESxxB series Document No. LX1-1122 Rev1.2 p1/32 1. Application This specification shall be applied to the ESD Protection Device. LXES1UBAB1-007 LXES1UBAA1-096 LXES1TBCC2-004 LXES1TBBB2-013 LXES2SBAA4-016 LXES2SBBB4-026 LXES2SBAA4-114 LXES2TBCC4-028 LXES4XBAA6-027 LXESEABAA6-046 2. Part Number Configuration LXES 1U B AB 1 007 Product ID LXES = ESD Protection device Dimension Code Unit : mm Code Dimension package (serial number) Code Dimension package (serial number) DFN1006P2E (007) 1U 1.0 x 0.6 2T 2.5 x 1.0 DFN2510P10E (028) DFN1006P2X (096) 1T 1.6 x 1.6 QFN1616P6E (004/013) 4X 4.9 x 3.0 MSOP-8L (027) SOT23-6L (016/026) 2S 2.9 x 2.8 EA 4.12.0 DFN4120P10E(046) SOT23-5L (114) Type(B:Silicon ESD) Control Code Number of channel Serial Number RoHS Compliant Halogen free T/R only. p2/32 3. CHARACTERISTICS 3-1 Ratings Operating Storage Parameter Package Temperature Temperature Symbol T T OP STO 0 0 Unit C C LXES1UBAB1-007 DFN1006P2E -40 to +85 -40 to +125 LXES1UBAA1-096 DFN1006P2X -40 to +85 -40 to +125 LXES1TBCC2-004 -40 to +85 -40 to +125 QFN1616P6E LXES1TBBB2-013 -40 to +85 -40 to +125 LXES2SBAA4-016 -40 to +85 -40 to +125 SOT23-6L LXES2SBBB4-026 -40 to +85 -40 to +125 LXES2SBAA4-114 SOT23-5L -40 to +85 -40 to +125 LXES2TBCC4-028 DFN2510P10E -40 to +85 -40 to +125 LXES4XBAA6-027 MSOP-8L -40 to +85 -40 to +125 LXESEABAA6-046 DFN4120P10E -40 to +85 -40 to +125 3-2 Electrical Characteristics (T=25) Reverse ESD per IEC Channel Leakage Break down ESD per IEC Parameter Working 61000-4-2 Capacitance Current voltage 61000-4-2(air) Voltage (contact) Symbol V I V V V C RWM leak br esd esd Unit V uA V kV kV pF VP =5V, I =1mA, VP =0V, f = 1MHz, in1 br in1,2 Condition Ta=25 Ta=25 VP =0V P to P Between Channel pins in2 in1 in2 LXES1UBAB1-007 +/-17.5 1.0 (max) 18 (min) +/- 15 +/- 8 0.5 LXES1UBAA1-096 +/-5.5 1.0 (max) 5.8 (min) +/- 15 +/- 12 8 Reverse ESD per IEC Channel Leakage Break down ESD per IEC Parameter Working 61000-4-2 Capacitance Current voltage 61000-4-2(air) Voltage (contact) Symbol V I V V V C RWM leak br esd esd Unit V uA V kV kV pF V = 5V, V = 0V, pin5 pin2 V =5V, V =0V, pin5 pin2 Condition I =1mA Ta=25 Ta=25 V = 2.5V, f = 1MHz, br IN V =0-5V CH Any I/O pin to Ground LXES1TBCC2-004 +/-5.5 1.0 (max) 6 (min) +/- 15 +/- 12 0.55 Reverse ESD per IEC Channel Leakage Break down ESD per IEC Parameter Working 61000-4-2 Capacitance Current voltage 61000-4-2(air) Voltage (contact) Symbol V I V V V C RWM leak br esd esd Unit V uA V kV kV pF V = 5V, V = 0V, pin2 pin5 V =5V, V =0V, pin5 pin2 Condition I =1mA Ta=25 Ta=25 V = 2.5V, f = 1MHz, br IN V =0-5V CH Any I/O pin to Ground LXES1TBBB2-013 +/-5.5 1.0 (max) 6 (min) +/- 15 +/- 12 0.55 MURATA MFG. CO., LTD.