RB520CS30L

RB520CS30L 100 mA low V MEGA Schottky barrier rectifier F Rev. 1 10 March 2011 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Average forward current: I 100 mA F(AV) Reverse voltage: V 30 V R Low forward voltage: V 450 mV F Low reverse current: I 0.5 A R AEC-Q101 qualified Leadless ultra small SMD plastic package 1.3 Applications Low current rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I average forward current square wave F(AV) = 0.5 f = 20 kHz 1 T 135 C - - 100 mA amb T 145 C - - 100 mA sp I reverse current V = 10 V - 0.14 0.5 A R R V reverse voltage - - 30 V R 2 V forward voltage I =10mA - 330 450 mV F F 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 cathode 1 cm . 2 Pulse test: t 300 s 0.02. p SOD882RB520CS30L NXP Semiconductors 100 mA low V MEGA Schottky barrier rectifier F 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 1 cathode 12 2 anode 1 2 sym001 Transparent top view 1 The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version RB520CS30L - leadless ultra small plastic package 2 terminals SOD882 body 1.0 0.6 0.5 mm 4. Marking Table 4. Marking codes Type number Marking code RB520CS30L AP 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 30 V R I average forward current square wave = 0.5 F(AV) f = 20 kHz 1 T 135 C -100 mA amb T 145 C-100mA sp 2 I non-repetitive peak forward half sine wave -3 A FSM current t 8.3 ms p 4 3 P total power dissipation T 25 C -315 mW tot amb 4 1 -565 mW 4 5 -865 mW RB520CS30L All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 10 March 2011 2 of 14