BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor Rev. 04 18 February 2009 Product data sheet 1. Product prole 1.1 General description NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. 1.2 Features n Low collector capacitance n Low collector-emitter saturation voltage n Closely matched current gain n Reduces number of components and board space n No mutual interference between the transistors 1.3 Applications n General-purpose switching and amplication 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor for the PNP transistor with negative polarity V collector-emitter voltage open base - - 45 V CEO I collector current - - 100 mA C h DC current gain V =5V I = 2 mA 200 - 450 FE CE C 2. Pinning information Table 2. Pinning Pin Description Simplied outline Graphic symbol 1 emitter TR1 6 5 4 6 5 4 2 base TR1 3 collector TR2 TR2 TR1 4 emitter TR2 132 5 base TR2 1 2 3 6 collector TR1 sym019BC847BPN NXP Semiconductors 45 V, 100 mA NPN/PNP general-purpose transistor 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BC847BPN SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code BC847BPN 13* 1 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor for the PNP transistor with negative polarity V collector-base voltage open emitter - 50 V CBO V collector-emitter voltage open base - 45 V CEO V emitter-base voltage open collector - 5 V EBO I collector current - 100 mA C I peak collector current single pulse - 200 mA CM t 1ms p I peak base current single pulse - 200 mA BM t 1ms p 1 P total power dissipation T 25 C - 220 mW tot amb 2 - 250 mW Per device 1 P total power dissipation T 25 C - 300 mW tot amb 2 - 400 mW T junction temperature - 150 C j T ambient temperature - 65 +150 C amb T storage temperature - 65 +150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . BC847BPN 4 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 18 February 2009 2 of 14