Document Number: MMZ25333B FreescaleSemiconductor Rev. 1, 8/2014 Technical Data 2WHighGainPowerAmplifierfor CellularInfrastructure MMZ25333BT1 InGaP GaAs HBT TheMMZ25333Bisaversatile3--stagepoweramplifiertargetedatdriverand pre--driver applications for macro and micro base stations and final--stage applications for small cells. Its versatile design allows operation in any 15002700MHz,44.2dB,31.7dBm frequencybandfrom1500to2700MHzprovidinggainofmorethan40dB.The InGaPHBTLINEARAMPLIFIER device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 4 surface mount package. Typical PA Driver Performance: V =V =V =V =5Vdc, CC1 CC2 CC3 BIAS I = 265 mA CQ P G ACPR I out ps CC Frequency (dBm) (dB) (dBc) Total TestSignal 2600 MHz 18.0 42.6 50.8 296 W--CDMA QFN4 4 2140 MHz 17.0 43.7 50.7 293 W--CDMA Typical Output PA Performance: V =V =V =V =5Vdc, CC1 CC2 CC3 BIAS I = 450 mA CQ P G ACPR I out ps CC Frequency (dBm) (dB) (dBc) Total TestSignal 2600 MHz 22.2 42.7 48.0 501 W--CDMA Features P1dB:upto33dBm Gain: More than 40 dB 5 V Supply Excellent Linearity High Efficiency Single--ended Power Detector Band Tunable In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. V / CC1 RF RF V P out1 in2 CC2 DET V /RF CC3 out3 RF in1 V /RF CC3 out3 V /RF CC3 out3 BIAS CIRCUIT V V VV BA1 BA2 BIBIASAS Figure1.FunctionalBlockDiagram Freescale Semiconductor, Inc., 2014. All rights reserved. MMZ25333BT1 RF Device Data Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Supply Voltage V 6 V CC Supply Current I I 66 mA CC1 CC I 240 CC2 I 960 CC3 RF Input Power P 10 dBm in Storage Temperature Range T 65 to +150 C stg Junction Temperature T 175 C J Table2.ThermalCharacteristics (1) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 104C, V =V =V =V =5 Vdc Stage 1 28 CC1 CC2 CC3 BIAS Stage 2 68 Stage 3 21 Table3.ElectricalCharacteristics (V =V =V =V =5 Vdc, 2600 MHz, T =25 C, 50 ohm system, in Freescale PA CC1 CC2 CC3 BIAS A Driver Application Circuit) Characteristic Symbol Min Typ Max Unit Small--Signal Gain (S21) G 40.4 43.0 dB p Input Return Loss (S11) IRL 12.2 dB Output Return Loss (S22) ORL 7.1 dB Power Output 1dB Compression P1dB 32.0 dBm Third Order Output Intercept Point, Two--Tone CW OIP3 42.8 dBm Total Supply Current (I +I +I +I ) I 244 265 284 mA CC1 CC2 CC3 BIAS CQ Supply Voltage V 5 V CC 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to