DocumentNumber:MW7IC008N FreescaleSemiconductor Rev. 3, 12/2013 Technical Data RFLDMOSWidebandIntegrated PowerAmplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on--chip matching that makes it usable from 20 to 1000 MHz. This multi--stage structure is rated for 24 to 32 volt operation and covers most narrow bandwidth communication application formats. DriverApplications 100--1000MHz,8WPEAK,28V Typical CW Performance: V =28Volts,I =25mA,I =75mA RFLDMOSWIDEBAND DD DQ1 DQ2 INTEGRATEDPOWERAMPLIFIER G PAE ps Frequency (dB) (%) 100 MHz 11 W CW 23.5 55 400 MHz 9 W CW 22.5 41 900 MHz 6.5 W CW 23.5 34 Capable of Handling 10:1 VSWR, 32 Vdc, 900 MHz, P = 6.5Watts CW out (3 dB Input Overdrive from Rated P ) out Stable into a 5:1 VSWR. All Spurs Below --60 dBc 1 mW to 8 Watts CW PQFN8 8 P 900 MHz out PLASTIC Typical P 1 dB Compression Point 11 Watts CW 100 MHz, out 9 Watts CW 400 MHz, 6.5 Watts CW 900 MHz Features Broadband, Single Matching Network from 20 to 1000 MHz Integrated Quiescent Current Temperature Compensation with (1) Enable/Disable Function Integrated ESD Protection In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel. V V TTS1 TTS2 QuiescentCurrent (1) 24 23 22 21 20 19 TemperatureCompensation V 1 18 NC GLS1 17 NC 2 NC V V GS1 GS2 NC 3 16 NC 15 NC 4 NC RF RF /V inS1 outS2 DS2 RF 5 14 NC inS1 13 V 6 RF /V GS1 outS2 DS2 78 9101112 RF /V RF outS1 DS1 inS2 Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +65 Vdc DSS Gate--Source Voltage V --6.0, +12 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Operating Junction Temperature T 150 C J (3) 100 MHz CW Operation T =25 C CW 11 W A (3) 400 MHz CW Operation T =25 C 6 W A (3) 900 MHz CW Operation T =25 C 5 W A Input Power 100 MHz P 27 dBm in 400 MHz 23 900 MHz 38 Table2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R C/W JC (CW Signal 100 MHz) (Case Temperature 82 C, P =11 W CW) Stage 1, 28 Vdc, I =25mA 5.3 out DQ1 Stage 2, 28 Vdc, I =75mA 4.9 DQ2 (CW Signal 400 MHz) (Case Temperature 87 C, P =9 W CW) Stage 1, 28 Vdc, I =25mA 4.4 out DQ1 Stage 2, 28 Vdc, I =75mA 2.7 DQ2 (CW Signal 900 MHz) (Case Temperature 86 C, P =6.5 W CW) Stage 1, 28 Vdc, I =25mA 3.5 out DQ1 Stage 2, 28 Vdc, I =75mA 3.2 DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 1B Machine Model(perEIA/JESD22--A115) A Charge Device Model(perJESD22--C101) III Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDEC J--STD--020 3 260 C 1. MTTF calculatoravailable at