X-On Electronics has gained recognition as a prominent supplier of 15GN01CA-TB-E rf bipolar transistors across the USA, India, Europe, Australia, and various other global locations. 15GN01CA-TB-E rf bipolar transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for rf bipolar transistors, ensuring timely deliveries around the world.

15GN01CA-TB-E

15GN01CA-TB-E electronic component of ON Semiconductor
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See Product Specifications
Part No.15GN01CA-TB-E
Manufacturer: ON Semiconductor
Category:RF Bipolar Transistors
Description: Transistors RF Bipolar LOW-SATURATION VOLTAGE
Datasheet: 15GN01CA-TB-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 5342
Multiples : 5342
5342 : USD 0.0812
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.3713
10 : USD 0.2705
100 : USD 0.1531
1000 : USD 0.0795
3000 : USD 0.07
9000 : USD 0.0569
24000 : USD 0.0558
45000 : USD 0.0522
99000 : USD 0.051
N/A

Obsolete
     
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RoHS - XON
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We proudly offer the 15GN01CA-TB-E RF Bipolar Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the 15GN01CA-TB-E RF Bipolar Transistors.

LOT No. LOT No. Ordering number : ENA1098A 15GN01CA RF Transistor 15GN01CA Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 0.5 A CBO CB E Emitter Cutoff Current I V =2V, I =0A 0.5 A EBO EB C DC Current Gain h V =5V, I =10mA 200 400 FE CE C Gain-Bandwidth Product f V =5V, I =10mA 1.0 1.5 GHz T CE C Output Capacitance Cob V =10V, f=1MHz 1.2 1.6 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =20mA, I =2mA 0.06 0.12 V CE C B Output ON resistance Ron I =3mA, f=10kHz 2.0 B Ordering Information Device Package Shipping memo 15GN01CA-TB-E CP 3,000pcs./reel Pb Free I -- V I -- V C CE C CE 50 10 45 9 40 8 0.20mA 35 7 30 6 0.15mA 25 5 0.10mA 20 4 15 3 0.05mA 10 2 5A 5 1 I =0mA I =0A B B 0 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Collector-to-Emitter Voltage, V -- V IT06246 Collector-to-Emitter Voltage, V -- V IT06247 CE CE I -- V h -- I C BE FE C 7 60 V =5V V =5V CE CE 50 5 40 3 30 2 20 10 0 100 0 0.2 0.4 0.6 0.8 1.0 1.2 23 5 7 23 5 7 23 5 7 1.0 10 100 Base-to-Emitter Voltage, V -- V IT06248 Collector Current, I -- mA IT05405 BE C No. A1098-2/7 30A 25A 20A 15A 10A 40A 35A 0.25mA 45 A 0.30mA Collector Current, I -- mA Collector Current, I -- mA C C DC Current Gain, h Collector Current, I -- mA FE C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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