74F1071 18-Bit Undershoot/Overshoot Clamp and ESD Protection Device
January 2008
74F1071
18-Bit Undershoot/Overshoot Clamp and ESD
Protection Device
Features General Description
18-bit array structure in 20-pin package The 74F1071 is an 18-bit undershoot/overshoot clamp
which is designed to limit bus voltages and also to pro-
FAST Bipolar voltage clamping action
tect more sensitive devices from electrical overstress
Dual center pin grounds for min inductance
due to electrostatic discharge (ESD). The inputs of the
Robust design for ESD protection
device aggressively clamp voltage excursions nominally
Low input capacitance
at 0.5V below and 7V above ground.
Optimum voltage clamping for 5V CMOS/TTL
applications
Ordering Information
Package
Order Number Number Package Description
74F1071SC M20B 20-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-013, 0.300" Wide
74F1071MSA MSA20 20-Lead Shrink Small Outline Package (SSOP), JEDEC MO-150, 5.3mm Wide
74F1071MTC MTC20 20-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm
Wide
Device also available in Tape and Reel. Specify by appending suffix letter X to the ordering number.
All packages are lead free per JEDEC: J-STD-020B standard.
Connection Diagram
Note: Simplified Component Representation
1994 Fairchild Semiconductor Corporation www.fairchildsemi.com
74F1071 Rev. 1.4.074F1071 18-Bit Undershoot/Overshoot Clamp and ESD Protection Device
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating
T Storage Temperature 65C to +150C
STG
Ambient Temperature Under Bias 65C to +125C
T
A
T Junction Temperature Under Bias 65C to +150C
J
(1)
V Input Voltage 0.5V to +6V
I
(1)
Input Current 200mA to +50mA
I
I
(2)
ESD
Human Body Model (MIL-STD-883D method 3015.7) 10kV
IEC 801-2 6kV
Machine Model (EIAJIC-121-1981) 2kV
DC Latchup Source Current (JEDEC Method 17) 500mA
Package Power Dissipation @ +70C SOIC Package 800mW
Notes:
1. Voltage ratings may be exceeded if current ratings and junction temperature and power consumption ratings are not
exceeded.
2. ESD Rating for Direct contact discharge using ESD Simulation Tester. Higher rating may be realized in the actual
application.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol Parameter Rating
T Free Air Ambient Temperature 0C to +70C
A
V Reverse Bias Voltage 0V to 5.25 V
Z DC
Thermal Resistance (in Free Air)
JA
SOIC Package 100C/W
SSOP Package 110C/W
1994 Fairchild Semiconductor Corporation www.fairchildsemi.com
74F1071 Rev. 1.4.0 2