X-On Electronics has gained recognition as a prominent supplier of BCX17LT1 bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. BCX17LT1 bipolar transistors - bjt are a product manufactured by ON Semiconductor. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

BCX17LT1

BCX17LT1 electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.BCX17LT1
Manufacturer: ON Semiconductor
Category:Bipolar Transistors - BJT
Description: BCX17LT1 SOT23 MED POWER TRAN
Datasheet: BCX17LT1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0785 ea
Line Total: USD 0.08

Availability - 2900
Ships to you by
Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2900 - WHS 1


Ships to you by Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.0785
50 : USD 0.0393
200 : USD 0.0354
500 : USD 0.0294
1000 : USD 0.0265

     
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose www.onsemi.com Transistors Voltage and Current are Negative for PNP Transistors SOT23 Features (TO236) CASE 31808 S and NSV Prefix for Automotive and Other Applications Requiring STYLE 6 Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable PNP NPN These Devices are PbFree, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant COLLECTOR 3 3 MAXIMUM RATINGS 1 1 Rating Symbol Value Unit BASE BASE Collector Emitter Voltage V Vdc CEO BCX17, BCX19 45 2 2 BCX18 25 EMITTER EMITTER Collector Base Voltage V Vdc CBO BCX17, BCX19 50 MARKING DIAGRAM BCX18 30 Emitter Base Voltage V 5.0 Vdc EBO Collector Current Continuous I 500 mAdc C XX M   THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit Total Device Dissipation FR5 Board P 225 mW XX = T1, T2 or U1 D (Note 1), T = 25C M = Date Code* A Derate above 25C 1.8 mW/C  = PbFree Package Thermal Resistance, (Note: Microdot may be in either location) JunctiontoAmbient R 556 C/W  JA *Date Code orientation and/or overbar may Total Device Dissipation Alumina P D vary depending upon manufacturing location. Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C ORDERING INFORMATION Thermal Resistance, See detailed ordering and shipping information in the package JunctiontoAmbient R 417 C/W dimensions section on page 2 of this data sheet. JA Junction and Storage Temperature T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: November, 2016 Rev. 9 BCX17LT1/DBCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) C B BCX17, BCX19, SBCX19 45 BCX18 25 CollectorEmitter Breakdown Voltage V Vdc (BR)CES (I = 10 Adc, I = 0) C C BCX17, BCX19, SBCX19 50 BCX18 30 Collector Cutoff Current I CBO (V = 20 Vdc, I = 0) 100 nAdc CB E (V = 20 Vdc, I = 0, T = 150C) 5.0 Adc CB E A Emitter Cutoff Current I Adc EBO (V = 5.0 Vdc, I = 0) 10 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 100 mAdc, V = 1.0 Vdc) 100 600 C CE (I = 300 mAdc, V = 1.0 Vdc) 70 C CE (I = 500 mAdc, V = 1.0 Vdc) 40 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.62 C B BaseEmitter On Voltage V Vdc BE(on) (I = 500 mAdc, V = 1.0 Vdc) 1.2 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BCX17LT1G SOT23 3,000 / Tape & Reel T1 (PbFree) NSVBCX17LT1G* SOT23 3,000 / Tape & Reel T1 (PbFree) BCX18LT1G SOT23 3,000 / Tape & Reel T2 (PbFree) BCX19LT1G SOT23 3,000 / Tape & Reel U1 (PbFree) SBCX19LT1G* SOT23 3,000 / Tape & Reel U1 (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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