X-On Electronics has gained recognition as a prominent supplier of CAT93C76VI-G-T3 eeprom across the USA, India, Europe, Australia, and various other global locations. CAT93C76VI-G-T3 eeprom are a product manufactured by ON Semiconductor. We provide cost-effective solutions for eeprom, ensuring timely deliveries around the world.

CAT93C76VI-G-T3

CAT93C76VI-G-T3 electronic component of ON Semiconductor
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Part No.CAT93C76VI-G-T3
Manufacturer: ON Semiconductor
Category:EEPROM
Description: EEPROM Serial-Microwire 8K-bit 1K x 8/512 x 16 2.5V/3.3V/5V 8-Pin SOIC N T/R
Datasheet: CAT93C76VI-G-T3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1579 ea
Line Total: USD 473.7

Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1579

     
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We proudly offer the CAT93C76VI-G-T3 EEPROM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the CAT93C76VI-G-T3 EEPROM.

CAT93C76 8-Kb Microwire Serial EEPROM Description The CAT93C76 is an 8Kb Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at V or Not CAT93C76 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Temperature Under Bias 55 to +125 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 2.0 to +V +2.0 V CC V with Respect to Ground 2.0 to +7.0 V CC Lead Soldering Temperature (10 seconds) 300 C Output Short Circuit Current (Note 2) 100 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The minimum DC input voltage is 0.5 V. During transitions, inputs may undershoot to 2.0 V for periods of less than 20 ns. Maximum DC voltage on output pins is V +0.5 V, which may overshoot to V +2.0 V for periods of less than 20 ns. CC CC 2. Output shorted for no more than one second. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Reference Test Method Min Units N (Note 3) Endurance MILSTD883, Test Method 1033 1,000,000 Cycles / Byte END T (Note 3) Data Retention MILSTD883, Test Method 1008 100 Years DR V (Note 3) ESD Susceptibility MILSTD883, Test Method 3015 2,000 V ZAP I (Notes 3, 4) Latch Up JEDEC Standard 17 100 mA LTH 3. These parameters are tested initially and after a design or process change that affects the parameter. 4. Latchup protection is provided for stresses up to 100 mA on I/O pins from 1 V to V + 1 V. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = +1.8 V to +5.5 V unless otherwise specified.) CC Symbol Parameter Test Conditions Min Typ Max Units I Power Supply Current (Write) f = 1 MHz, V = 5.0 V 1 3 mA CC1 SK CC I Power Supply Current (Read) f = 1 MHz, V = 5.0 V 300 500 A CC2 SK CC I Power Supply Current CS = 0 V, ORG = GND 2 10 A SB1 (Standby) (x8 Mode) I Power Supply Current CS = 0 V, ORG = Float or V 0 (Note 5) 10 A SB2 CC (Standby) (x16 Mode) I Input Leakage Current V = 0 V to V 0 (Note 5) 10 A LI IN CC I Output Leakage Current V = 0 V to V , CS = 0 V 0 (Note 5) 10 A LO OUT CC I ORG Pin Leakage Current ORG = GND or ORG = V 1 10 A LORG CC V Input Low Voltage 4.5 V V 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 1.8 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 1.8 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V 5.5 V, I = 2.1 mA 0.4 V OL1 CC OL V Output High Voltage 4.5 V V 5.5 V, I = 400 A 2.4 V OH1 CC OH V Output Low Voltage 1.8 V V < 4.5 V, I = 100 A 0.1 V OL2 CC OL V Output High Voltage 1.8 V V < 4.5 V, I = 100 A V 0.2 V OH2 CC OH CC 5. 0 A is defined as less than 900 nA. Table 4. PIN CAPACITANCE (Note 3) Symbol Test Conditions Min Typ Max Units C Output Capacitance (DO) V = 0 V 5 pF OUT OUT C Input Capacitance (CS, SK, DI, ORG) V = 0 V 5 pF IN IN

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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