X-On Electronics has gained recognition as a prominent supplier of MMBF170LT1G mosfet across the USA, India, Europe, Australia, and various other global locations. MMBF170LT1G mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

MMBF170LT1G

MMBF170LT1G electronic component of ON Semiconductor
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See Product Specifications
Part No. MMBF170LT1G
Manufacturer: ON Semiconductor
Category: MOSFET
Description: N-Channel 60 V 500mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Datasheet: MMBF170LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.065 ea
Line Total: USD 195

Availability - 81480
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
15057 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.436
10 : USD 0.3017
25 : USD 0.2987
100 : USD 0.1365
250 : USD 0.1352
500 : USD 0.1266
1000 : USD 0.0868
3000 : USD 0.0597
6000 : USD 0.0524
15000 : USD 0.0484

4743 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5044
25 : USD 0.351
50 : USD 0.2873
100 : USD 0.2223
250 : USD 0.182

8206 - WHS 3


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 5
Multiples : 5
5 : USD 0.1052
50 : USD 0.0835
150 : USD 0.0726
500 : USD 0.0645
3000 : USD 0.058
6000 : USD 0.0548

81 - WHS 4


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 10
Multiples : 1
10 : USD 0.1105
50 : USD 0.0832
249 : USD 0.0663
685 : USD 0.0637
3000 : USD 0.0624

64020 - WHS 5


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.065
9000 : USD 0.055
24000 : USD 0.0536
45000 : USD 0.0465
99000 : USD 0.0443

75660 - WHS 6


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.0746
18000 : USD 0.0682
36000 : USD 0.0634
54000 : USD 0.0599

15057 - WHS 7


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 171
Multiples : 1
171 : USD 0.1365
250 : USD 0.1352
500 : USD 0.1266
1000 : USD 0.0868
3000 : USD 0.0625
6000 : USD 0.0524
15000 : USD 0.0484

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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MMBF170L, NVBF170L MOSFET N-Channel, SOT-23 500 mA, 60 V Features www.onsemi.com NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 500 mA, 60 V These Devices are PbFree and are RoHS Compliant R = 5 DS(on) MAXIMUM RATINGS SOT23 Rating Symbol Value Unit CASE 318 DrainSource Voltage V 60 Vdc DSS STYLE 21 DrainGate Voltage V 60 Vdc DGS GateSource Voltage Continuous V 20 Vdc NChannel GS Nonrepetitive (t 50 s) V 40 Vpk p GSM 3 Drain Current Continuous I 0.5 Adc D Pulsed I 0.8 DM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 1 Total Device Dissipation FR5 Board P D (Note 1.) T = 25C 225 mW A Derate above 25C 1.8 mW/C 2 Thermal Resistance, JunctiontoAmbient R 556 C/W JA Junction and Storage Temperature T , T 55 to C J stg +150 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the & PIN ASSIGNMENT device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 3 1. FR5 = 1.0 0.75 0.062 in. Drain 6Z M Gate 1 2 Source 6Z = Specific Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: May, 2019 Rev. 10 MMBF170LT1/DMMBF170L, NVBF170L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage (V = 0, I = 100 A) V 60 Vdc GS D (BR)DSS GateBody Leakage Current, Forward (V = 15 Vdc, V = 0) I 10 nAdc GSF DS GSS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (V = V , I = 1.0 mA) V 0.8 3.0 Vdc DS GS D GS(th) Static DrainSource OnResistance (V = 10 Vdc, I = 200 mA) r 5.0 GS D DS(on) OnState Drain Current (V = 25 Vdc, V = 0) I 0.5 A DS GS D(off) DYNAMIC CHARACTERISTICS Input Capacitance C 60 pF iss (V = 10 Vdc, V = 0 V, f = 1.0 MHz) DS GS SWITCHING CHARACTERISTICS (Note 1) TurnOn Delay Time t 10 ns d(on) (V = 25 Vdc, I = 500 mA, R = 50 ) DD D gen Figure 1 TurnOff Delay Time t 10 d(off) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping MMBF170LT1G SOT23 (TO236) 3000 / Tape & Reel (PbFree) MMBF170LT3G SOT23 (TO236) 10000 / Tape & Reel (PbFree) NVBF170LT1G* SOT23 (TO236) 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. +25 V t on t off t t t d(on) r d(off) t f 90% 90% 125 TO SAMPLING OUTPUT V in SCOPE INVERTED PULSE 50 INPUT 10% GENERATOR 20 dB 50 V out V out ATTENUATOR 40 pF 50 INPUT 90% 50% 50% 10% V 50 1 M in PULSE WIDTH (V AMPLITUDE 10 VOLTS) in Figure 1. Switching Test Circuit Figure 2. Switching Waveform www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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