X-On Electronics has gained recognition as a prominent supplier of MMBT5401LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5401LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5401LT1G ON Semiconductor

MMBT5401LT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.MMBT5401LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS HV XSTR PNP 150V
Datasheet: MMBT5401LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0235 ea
Line Total: USD 70.5 
Availability - 98940
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
98940
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0235
9000 : USD 0.0226
27000 : USD 0.0219
51000 : USD 0.0213
102000 : USD 0.0205
150000 : USD 0.02
252000 : USD 0.0198
501000 : USD 0.0194

71
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0221

2796510
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0335
9000 : USD 0.0287
24000 : USD 0.0279
48000 : USD 0.0208

16277
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 10
Multiples : 10
10 : USD 0.048
100 : USD 0.0394
300 : USD 0.0351
3000 : USD 0.0315
6000 : USD 0.0302
9000 : USD 0.0293

98940
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0287
9000 : USD 0.0277
27000 : USD 0.0268
51000 : USD 0.026
102000 : USD 0.0251

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT5401LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5401LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT5401L, SMMBT5401L, NSVMMBT5401L High Voltage Transistor PNP Silicon www.onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 (TO236) Compliant CASE 318 STYLE 6 MAXIMUM RATINGS COLLECTOR Rating Symbol Value Unit 3 CollectorEmitter Voltage V 150 Vdc CEO CollectorBase Voltage V 160 Vdc CBO 1 BASE EmitterBase Voltage V 5.0 Vdc EBO Collector Current Continuous I 500 mAdc C 2 Stresses exceeding those listed in the Maximum Ratings table may damage EMITTER the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 2L M Total Device Dissipation P 225 mW D FR5 Board (Note 1) T = 25C 1 A Derate Above 25C 1.8 mW/C 2L = Specific Device Code Thermal Resistance, R 556 C/W JA M = Date Code* JunctiontoAmbient = PbFree Package Total Device Dissipation P 300 mW D (Note: Microdot may be in either location) Alumina Substrate (Note 2) T = 25C A *Date Code orientation and/or overbar may Derate Above 25C 2.4 mW/C vary depending upon manufacturing location. Thermal Resistance, R 417 C/W JA JunctiontoAmbient ORDERING INFORMATION Junction and Storage Temperature T , T 55 to +150 C J stg Device Package Shipping 1. FR5 = 1.0 0.75 0.062 in. MMBT5401LT1G SOT23 3,000 / Tape & 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. (PbFree) Reel SMMBT5401LT1G SOT23 3,000 / Tape & (PbFree) Reel MMBT5401LT3G SOT23 10,000 / Tape & (PbFree) Reel NSVMMBT5401LT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: December, 2017 Rev. 14 MMBT5401LT1/DMMBT5401L, SMMBT5401L, NSVMMBT5401L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 150 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 160 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C CollectorBase Cutoff Current I CBO (V = 120 Vdc, I = 0) 50 nAdc CB E (V = 120 Vdc, I = 0, T = 100C) 50 Adc CB E A ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) 50 C CE (I = 10 mAdc, V = 5.0 Vdc) 60 240 C CE (I = 50 mAdc, V = 5.0 Vdc) 50 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.5 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 1.0 C B (I = 50 mAdc, I = 5.0 mAdc) 1.0 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 10 Vdc, f = 100 MHz) 100 300 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 6.0 CB E Small Signal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) 40 200 C CE Noise Figure NF dB (I = 200 Adc, V = 5.0 Vdc, R = 10 , f = 1.0 kHz) 8.0 C CE S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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