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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MMBT5550 NPN General Purpose Amplifier August 2005 MMBT5550 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. 3 2 SOT-23 1 Marking: 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * T = 25 C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 140 V CEO V Collector-Base Voltage 160 V CBO V Emitter-Base Voltage 6.0 V EBO I Collector current - Continuous 600 mA C T , T Junction and Storage Temperature -55 ~ +150 C J stg * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T = 25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 1.0mA, I = 0 140 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100A, I = 0 160 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10mA, I = 0 6.0 V (BR)EBO E C I Collector Cutoff Current V = 100V, I = 0 100 nA CBO CB E V = 100V, I = 0, T = 100C 100 A CB E a I Emitter Cutoff Current V = 4.0V, I = 0 50 nA EBO EB C On Characteristics h DC Current Gain I = 1.0mA, V = 5.0V 60 FE C CE I = 10mA, V = 5.0V 60 250 C CE I = 50mA, V = 5.0V 20 C CE V Collector-Emitter Saturation Voltage I = 10mA, I = 1.0mA 0.15 V CE(sat) C B I = 50mA, I = 5.0mA 0.25 V C B V Base-Emitter On Voltage I = 10mA, I = 1.0mA 1.0 V BE(sat) C B I = 50mA, I = 5.0mA 1.2 V C B 2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com MMBT5550 Rev. A