X-On Electronics has gained recognition as a prominent supplier of MMBT5550LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5550LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5550LT1G ON Semiconductor

MMBT5550LT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.MMBT5550LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT SS HV XSTR NPN 160V
Datasheet: MMBT5550LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0281 ea
Line Total: USD 84.3 
Availability - 311370
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
116400
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0264
12000 : USD 0.019
27000 : USD 0.0185
51000 : USD 0.0176
102000 : USD 0.0171
252000 : USD 0.0169
501000 : USD 0.0166
1002000 : USD 0.0164

311370
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0281
6000 : USD 0.0272
9000 : USD 0.0213
15000 : USD 0.0195
21000 : USD 0.0168
30000 : USD 0.0161

17751
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 20
Multiples : 20
20 : USD 0.0409
200 : USD 0.0326
600 : USD 0.0279
3000 : USD 0.0247
9000 : USD 0.0223
21000 : USD 0.0211

2192
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.168
5 : USD 0.1344
10 : USD 0.1162
50 : USD 0.0742
100 : USD 0.0616

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT5550LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5550LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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High Voltage Transistors NPN Silicon MMBT5550L, MMBT5551L Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 www.onsemi.com Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector Emitter Voltage V Vdc 2 CEO MMBT5550 140 EMITTER MMBT5551 160 Collector Base Voltage V Vdc CBO MARKING 3 MMBT5550 160 DIAGRAM MMBT5551 180 1 Emitter Base Voltage V 6.0 Vdc 2 EBO x1x M Collector Current Continuous I 600 mAdc C SOT23 (TO236) CASE 318 Electrostatic Discharge ESD V 1 STYLE 6 Human Body Model > 8000 Machine Model > 400 x1x = Device Code THERMAL CHARACTERISTICS M1F = MMBT5550LT G1 = MMBT5551LT Characteristic Symbol Max Unit M = Date Code* Total Device Dissipation FR5 Board P D = PbFree Package (Note 1) T = 25C 225 mW A (Note: Microdot may be in either location) Derate Above 25C 1.8 mW/C *Date Code orientation and/or overbar may vary depending upon manufacturing location. Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P D Substrate (Note 2) T = 25C 300 mW A Derate Above 25C 2.4 mW/C ORDERING INFORMATION Thermal Resistance, JunctiontoAmbient R 417 C/W JA Device Package Shipping Junction and Storage Temperature T , T 55 to +150 C MMBT5550LT1G, SOT23 3,000 / Tape & J stg NSVMMBT5550LT1G (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MMBT5550LT3G SOT23 10,000 / Tape & assumed, damage may occur and reliability may be affected. (PbFree) Reel 1. FR5 = 1.0 0.75 0.062 in. MMBT5551LT1G SOT23 3,000 / Tape & 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. (PbFree) Reel SMMBT5551LT1G SOT23 3,000 / Tape & (PbFree) Reel MMBT5551LT3G SOT23 10,000 / Tape & (PbFree) Reel SMMBT5551LT3G SOT23 10,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: May, 2020 Rev. 13 MMBT5550LT1/DMMBT5550L, MMBT5551L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MMBT5550 140 C B MMBT5551 160 Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) MMBT5550 160 C E MMBT5551 180 Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 6.0 E C Collector Cutoff Current I CBO (V = 100 Vdc, I = 0) MMBT5550 100 nAdc CB E (V = 120 Vdc, I = 0) MMBT5551 50 CB E (V = 100 Vdc, I = 0, T = 100C) MMBT5550 100 Adc CB E A (V = 120 Vdc, I = 0, T = 100C) MMBT5551 50 CB E A Emitter Cutoff Current I nAdc EBO (V = 4.0 Vdc, I = 0) 50 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) MMBT5550 60 C CE MMBT5551 80 (I = 10 mAdc, V = 5.0 Vdc) MMBT5550 60 250 C CE MMBT5551 80 250 (I = 50 mAdc, V = 5.0 Vdc) MMBT5550 20 C CE MMBT5551 30 Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) Both Types 0.15 C B (I = 50 mAdc, I = 5.0 mAdc) MMBT5550 0.25 C B MMBT5551 0.20 Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) Both Types 1.0 C B (I = 50 mAdc, I = 5.0 mAdc) MMBT5550 1.2 C B MMBT5551 1.0 Collector Emitter Cutoff I nA CES (V = 10 V) Both Types 50 CB (V = 75 V) 100 CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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