MPSA05/MMBTA05 MPSA05/MMBTA05 NPN General Purpose Amplifier 3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. 2 SOT-23 TO-92 1 Mark: 1H 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage 60 V CEO V Collector-Base Voltage 60 V CBO V Emitter-Base Voltage 4.0 V EBO I Collector current - Continuous 500 mA C T , T Junction and Storage Temperature -55 ~ +150 C J stg Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 1mA, I = 0 60 V (BR)CEO C B V Emitter-Base Breakdown Voltage I = 100 A, I = 0 4 V (BR)EBO C C I Collector Cutoff Current V = 60V, I = 0 0.1 A CEO CE B I Emitter Cutoff Current V = 60V, I = 0 0.1 A CBO CB E On Characteristics h DC Current Gain I = 10mA, V = 1.0V 100 FE C CE I = 100mA, V = 1.0V 100 C CE V Collector-Emitter Saturation Voltage I = 100mA, I = 10mA 0.25 V CE(sat) C B V Base-Emitter On Voltage I = 100mA, V = 1.0V 1.2 V BE(on) C CE Small Signal Characteristics f Current Gain Bandwidth Product I = 10mA, V = 2V, 100 MHz T C CE f = 100MHz * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Thermal Characteristics T =25C unless otherwise noted A Max. Symbol Parameter Units MPSA05 *MMBTA05 P Total Device Dissipation 625 350 mW D Derate above 25C 5 2.8 mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC R Thermal Resistance, Junction to Ambient 200 357 C/W JA * Device mounted on FR-4 PCB 1.6 0.06 2002 Fairchild Semiconductor Corporation Rev. B1, November 2002MPSA05/MMBTA05 Package Dimensions TO-92 +0.25 4.58 0.15 0.46 0.10 +0.10 1.27TYP 1.27TYP 0.38 0.05 1.27 0.20 1.27 0.20 3.60 0.20 (R2.29) Dimensions in Millimeters 2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 3.86MAX 1.02 0.10 +0.10 0.38 0.05 (0.25) 14.47 0.40 4.58 0.20