NPN - MPS650, MPS651 PNP - MPS750, MPS751 Amplifier Transistors Features These are PbFree Devices* NPN MPS650, MPS651 PNP MPS750, MPS751 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 10 mAdc, I = 0) MPS650, MPS750 40 C B MPS651, MPS751 60 Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0 ) MPS650, MPS750 60 C E MPS651, MPS751 80 Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 0, I = 10 Adc) C E Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) MPS650, MPS750 0.1 CB E (V = 80 Vdc, I = 0) MPS651, MPS751 0.1 CB E Emitter Cutoff Current I 0.1 Adc EBO (V = 4.0 V, I = 0) EB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 50 mA, V = 2.0 V) 75 C CE (I = 500 mA, V = 2.0 V) 75 C CE (I = 1.0 A, V = 2.0 V) 75 C CE (I = 2.0 A, V = 2.0 V) 40 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 2.0 A, I = 200 mA) 0.5 C B (I = 1.0 A, I = 100 mA) 0.3 C B BaseEmitter On Voltage V 1.0 Vdc BE(on) (I = 1.0 A, V = 2.0 V) C CE Base Emitter Saturation Voltage V 1.2 Vdc BE(sat) (I = 1.0 A, I = 100 mA) C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note 2) f 75 MHz T (I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz) C CE 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. 2. f is defined as the frequency at which h extrapolates to unity. T fe NPN PNP 300 250 T = 125C J 270 225 V = -2.0 V V = 2.0 V CE CE T = 125C J 240 200 210 175 25C 150 180 25C 150 125 120 100 - 55C - 55C 90 75 60 50 30 25 0 0 10 20 50 100 200 500 1.0 A 2.0 A 4.0 A -10 - 20 - 50 -100 - 200 - 500 -1.0 A -2.0 A -4.0 A I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 1. MPS650, MPS651 Figure 2. MPS750, MPS751 Typical DC Current Gain Typical DC Current Gain