STK760-216-E ON Semiconductor

Ordering number : ENA1793A STK760-216-E Thick-Film Hybrid IC Single-phase rectification STK760-216-E Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings unit IGBT Collector-emitter voltage VCE 600 V (TR1+TR2) Repetitive peak collector current ICP *1 300 A Collector current IC 148 A Power dissipation PC1 223 W FRD1 Diode reverse voltage VRM 600 V (D1) Repetitive peak forward current IF1P *1 220 A Diode forward current IF1 73 A Power dissipation PD1 150 W FRD2 Repetitive peak forward current IF2P *1 15 A (D2) Diode forward current IF2 7 A Power dissipation PD2 13 W Supply voltage (V-GND) V 20 V CC CC Signal pin input voltage Pin 1 VBOP -0.3 to 9.0 Pin 7 VIS -10 to 0.3 Pin 8 VCOMP Pin 12 VFB -0.3 to 6.5 V Pin 13 VOVP Pin 4 VONF -0.3 to V CC Pin 10 Vctl Maximum input AC voltage VAC Single-phase Full-rectified 264 V Maximum output voltage V Under the Application condition 450 V O (VAC=200V) Maximum output power Wo 8kW Input AC current (normal condition) I 40 Arms IN Junction temperature Tj 150 C Operating case temperature Tc HIC case temperature *2 -20 to +100 C Storage temperature Tstg -40 to +125 C Tightening torque A screw part *3 1.17 Nm Withstand voltage VINS 50Hz sine wave AC 1minute *4 2000 VRMS Note *1: Duty ratio D = 0.1, tp = 1ms *2: Measure point is between 5mm to center of back. *3: Torque should be set within 0.79 to 1.17Nm. Flatness of the heat-sink should be lower than 0.2mm. *4: The test condition: AC2500V, 1 second. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. No.A1793-2/11