ESD7421, SZESD7421 ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD7421 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are www.onsemi.com exposed to ESD. Because of its small size, it is suited for use in cellular phones, automotive sensors, infotainment, MP3 players, digital cameras and many other applications where board space comes at a Pin 1 Pin 2 premium. Specification Features Low Capacitance 0.3 pF MARKING Low Clamping Voltage DIAGRAM Low Leakage 100 nA Response Time is < 1 ns 5 M XDFN2 IEC6100042 Level 4 ESD Protection (SOD882) CASE 711AM SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and 5 = Specific Device Code PPAP Capable M = Date Code = PbFree Package These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping Rating Symbol Value Unit ESD7421N2T5G XDFN2 8000 / IEC 6100042 (ESD) Contact 12 kV (PbFree) Tape & Reel Air 15 SZESD7421N2T5G XDFN2 8000 / Total Power Dissipation on FR5 Board P 300 mW D (PbFree) Tape & Reel (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA For information on tape and reel specifications, including part orientation and tape sizes, please Junction and Storage Temperature Range T , T 55 to +150 C J stg refer to our Tape and Reel Packaging Specifications Lead Solder Temperature Maximum T 260 C Brochure, BRD8011/D. L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2017 Rev. 3 ESD7421/DESD7421, SZESD7421 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR2 RWM V I V V V R RWM BR1 C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR1 T I PP V Breakdown Voltage I BR2 T BiDirectional I Test Current T *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working V Pin 1 to GND 5 16 V RWM Voltage Pin 2 to GND 5 10 Breakdown Voltage V I = 1 mA, Pin 1 to GND 16.5 V BR1 T Breakdown Voltage V I = 1 mA, Pin 2 to GND 10.5 14 V BR2 T Reverse Leakage I V = 5 V, I/O Pin to GND 100 500 nA R RWM Current V = 16 V, Pin 1 to GND 1.0 A RWM Clamping Voltage V IEC6100042, 8 kV Contact See Figures 2 and 3 C (Note 2) Clamping Voltage TLP V I = 8 A 35 V C PP (Note 3) I = 16 A 38.1 PP I = 8 A 21 PP I = 16 A 29.5 PP Junction Capacitance C VR = 0 V, f = 1 MHz between I/O Pins and GND 0.3 0.6 pF J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. For test procedure see Figure 5 and application note AND8307/D. 3. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 www.onsemi.com 2