X-On Electronics has gained recognition as a prominent supplier of SZESD7421N2T5G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SZESD7421N2T5G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SZESD7421N2T5G ON Semiconductor

SZESD7421N2T5G electronic component of ON Semiconductor
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Part No.SZESD7421N2T5G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ON Semiconductor TVS Diodes - Transient Voltage Suppressors Q101 PPAP ESD7421
Datasheet: SZESD7421N2T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5738 ea
Line Total: USD 0.57 
Availability - 2619
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2619
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5738
10 : USD 0.414
100 : USD 0.2898
500 : USD 0.2346
1000 : USD 0.2001
2500 : USD 0.199
8000 : USD 0.1794

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SZESD7421N2T5G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SZESD7421N2T5G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESD7421, SZESD7421 ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD7421 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are www.onsemi.com exposed to ESD. Because of its small size, it is suited for use in cellular phones, automotive sensors, infotainment, MP3 players, digital cameras and many other applications where board space comes at a Pin 1 Pin 2 premium. Specification Features Low Capacitance 0.3 pF MARKING Low Clamping Voltage DIAGRAM Low Leakage 100 nA Response Time is < 1 ns 5 M XDFN2 IEC6100042 Level 4 ESD Protection (SOD882) CASE 711AM SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and 5 = Specific Device Code PPAP Capable M = Date Code = PbFree Package These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping Rating Symbol Value Unit ESD7421N2T5G XDFN2 8000 / IEC 6100042 (ESD) Contact 12 kV (PbFree) Tape & Reel Air 15 SZESD7421N2T5G XDFN2 8000 / Total Power Dissipation on FR5 Board P 300 mW D (PbFree) Tape & Reel (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA For information on tape and reel specifications, including part orientation and tape sizes, please Junction and Storage Temperature Range T , T 55 to +150 C J stg refer to our Tape and Reel Packaging Specifications Lead Solder Temperature Maximum T 260 C Brochure, BRD8011/D. L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2017 Rev. 3 ESD7421/DESD7421, SZESD7421 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR2 RWM V I V V V R RWM BR1 C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR1 T I PP V Breakdown Voltage I BR2 T BiDirectional I Test Current T *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working V Pin 1 to GND 5 16 V RWM Voltage Pin 2 to GND 5 10 Breakdown Voltage V I = 1 mA, Pin 1 to GND 16.5 V BR1 T Breakdown Voltage V I = 1 mA, Pin 2 to GND 10.5 14 V BR2 T Reverse Leakage I V = 5 V, I/O Pin to GND 100 500 nA R RWM Current V = 16 V, Pin 1 to GND 1.0 A RWM Clamping Voltage V IEC6100042, 8 kV Contact See Figures 2 and 3 C (Note 2) Clamping Voltage TLP V I = 8 A 35 V C PP (Note 3) I = 16 A 38.1 PP I = 8 A 21 PP I = 16 A 29.5 PP Junction Capacitance C VR = 0 V, f = 1 MHz between I/O Pins and GND 0.3 0.6 pF J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. For test procedure see Figure 5 and application note AND8307/D. 3. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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FAIRCHILD (ON SEMICONDUCTOR)
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FS8
FSC
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ON SEMI
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ON SEMICONDUCTOR (FAIRCHILD)
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ON-SEMI
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