1SS400_R1_00001 Panjit

1SS400 SURFACE MOUNT SWITCHING DIODE This device is an extremely fast switching diode housed in the ultra-small SOD-523 package. Ideal for applications FEATURES Extremely fast reverse recovery time to reduce switching losses Very low capacitance for reduced insertion losses 0.050(1.25) 0.045(1.15) Reverse voltage rating of 80V 0.014(0.35) 0.009(0.25) 0.034(0.85) Also available in lead-free plating (100% matte tin finish) 0.029(0.75) 0.026(0.65) 0.021(0.55) Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) 0.006(0.15) 0.002(0.05) 0.067(1.70) 0.059(1.50) 0.20 MIN. MECHANICAL DATA Case: SOD-523, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Polarity : Color band denotes cathode end Approx.Weight : 0.0014 ounces, 0.0001 grams Marking : 14 O MAXIMUM RATINGS TJ = 25 C UNLESS OTHERWISE NOTED PARAMETER SYMBOL LIMITS UNITS Peak Reverse Voltage VRM 90 V Continuous Reverse Voltage VR 80 V Continuous Forward Current I F 225 mA Non-repetitive Peak Forward Current,t= 0.001ms,Square Wave I FSM 4 A TotalPower Dissipation(Note1) P 200 mW tot O Operating Junctionand Storage Temperature Range TJ,TSTG -55 to 150 C Note 1. FR-5 Board 1.0 x 0.75 x 0.062 in THERMAL CHARACTERISTICS PARAMETER SYMBOL LIMITS UNITS O ThermalResistance,Junctionto Ambient R 625 C /W JA 1 2 Cathode Anode April 8,2016-REV.03 PAGE . 11SS400 O ELECTRICAL CHARACTERISTICS TJ = 25 C UNLESS OTHERWISE NOTED PARAMETER SYMBOL TESTCONDITIONS MIN TYP MAX UNITS Forward Voltage (Note 2) VF I F=01m0 A - -21. V Reverse Leakage Current - -10. A I R VR=V80 JunctionCapacitnace - 3- pF CD 0Vdc Bias,f= 1MHz I F=01mA, I R = 10mA Reverse RecoveryTime t RL = 100 Ohms - -04. ns rr (See Figure 1) mIeasured at Rr=ec 1mA Note 2. Short duration pulse test to avoid self-heating effect Figure 1. Reverse Recovery Time Equivalent Test Circuit April 8,2016-REV.03 PAGE . 2