X-On Electronics has gained recognition as a prominent supplier of BAV199S_R1_00001 Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. BAV199S_R1_00001 Small Signal Switching Diodes are a product manufactured by Panjit. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

BAV199S_R1_00001 Panjit

BAV199S_R1_00001 electronic component of Panjit
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Part No.BAV199S_R1_00001
Manufacturer: Panjit
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 100V,Small Signal Switching Diodes,SOT-363,4A
Datasheet: BAV199S_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1357 ea
Line Total: USD 0.14 
Availability - 137504
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
137504
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1357
10 : USD 0.0909
100 : USD 0.0471
1000 : USD 0.0356
3000 : USD 0.0311
9000 : USD 0.0265
24000 : USD 0.0184
45000 : USD 0.0184
99000 : USD 0.0161

2231
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.182
10 : USD 0.126
100 : USD 0.0714
250 : USD 0.063
320 : USD 0.0546

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAV199S_R1_00001 from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV199S_R1_00001 and other electronic components in the Small Signal Switching Diodes category and beyond.

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BAS116TW/BAV199S SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES 100 Volt 200mWatt VOLTAGE POWER FEATURES Suface mount package ideally suited for automatic insertion. Very low leakage current. 2nA typical at VR=75V. Low capacitance. 2pF max at VR=0V, f=1MHz Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) MECHANICAL DATA Case: SOT-363 plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx weight: 0.0002 ounces, 0.006 grams Marking: BAS116TW :PA BAV199S :PB ABSOLUTE RATINGS (each diode) PlARAMETER Seymbo Vsalu Unit Reverse Voltage VR 7V5 Peak Reverse Voltage VRM 1V00 Continuous Forward Current I F 0A.2 Non-repetitive Peak Forward Surge Current at t=1.0us I FSM 2A.0 THERMAL CHARACTERISTICS PlARAMETER Seymbo Vsalu Unit Power Dissipation (Note 1) PTOT 2W00 m O Thermal Resistance, Junction to Ambient (Note 1) RJA 625 C/W O Junction Temperature TJ -55 to 150 C O Storage Temperature TSTG -55 to 150 C 6 5 4 6 5 4 NOTE: 1. FR-4 Board = 70 x 60 x 1mm. 1 2 3 1 2 3 Fig.48 Fig.32 BAS116TW BAV199S PAGE . 1 May 26,2016REV.01BAS116TW/BAW156DW/BAV170DW/BAV199S O ELECTRICAL CHARACTERISTICS (each diode) (TA=25 C, unless otherwise noted) PlA RA ME TE R Snymb oT.e s t C o nd i ti o M.INT.YPMsA X Uni t RVe ve rs e B re a k d o wn Vo lta g e (BR) IR=u1 0 0A 7V5 V R=V7 5 0 .0 0 2 5 RIe ve rs e C urre nt R nA O V R=T7 5 V, J=1 5 0 C 8 .0 8 0 IF=m1 A 0 .9 IF=m1 0 A 1 .0 FVo rwa rd Vo lta g e F V IF=m5 0 A 1 .1 IF=m1 5 0A 1 .2 5 TCo ta l C a p a c i ta nc e T V R=,0Vf=1 MH Z 2F.0 p Rte ve rs e Re c o ve ry Ti me IF=IR=m1 0 AR, L=1 0 0 3s.0 u rr CHARACTERISTIC CURVES (each diode) 1000 10 100 1.0 O TA=-25 C 10 0.1 VR=75V O 1.0 T=A 75C 0.01 O T=A 25C O T=A 125C 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 VF, Forward Voltage (V) Tj, Junction Temperature (Deg C) Fig. 1-Reverse Leakage vs. Junction Temperature Fig. 2-Forward Current vs. Forward Voltage 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20406080 100 VR, Reverse Voltage (V) Fig. 3- Total capacitance vs. Reverse Voltage May 26,2016REV.01 PAGE . 2 IR, Reverse Leakage(nA) CT, Total Capacitance (pF) IF, Forward current (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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Panjit International Inc.
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