PPJA3404 30V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage 30 V Current 5.6A Features RDS(ON) , VGS 10V, ID 5.6A<30m RDS(ON) , VGS 4.5V, ID 3.5A<45m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A04 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 30 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I 5.6 A D Pulsed Drain Current I 22 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 100 JA - Junction to Ambient C/W March 10,2014-REV.00 Page 1 PPJA3404 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I=250uA 30 - - V DSS GS D Gate Threshold Voltage V V =V , I=250uA 1.0 1.33 2.1 V GS(th) DS GS D V =10V, I=5.6A - 27 30 GS D Drain-Source On-State Resistance R m DS(on) V =4.5V, I=3.5A - 39 45 GS D Zero Gate Voltage Drain Current I V =30V, V=0V - 0.01 1 uA DSS DS GS Gate-Source Leakage Current I V =+20V, V=0V - +10 +100 nA GSS GS DS Dynamic Total Gate Charge Q - 7.8 - g V =15V, I =5.6A, DS D Gate-Source Charge Q - 1.2 - nC gs (Note 1,2) V =10V GS Gate-Drain Charge Q - 1.5 - gd Input Capacitance Ciss - 343 - V =15V, V =0V, DS GS Output Capacitance Coss - 48 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 34 - Switching Turn-On Delay Time td - 3 - (on) V =15V, I =5.6A, DD D Turn-On Rise Time tr 40 - V =10V, ns GS Turn-Off Delay Time td 38 - (off) (Note 1,2) R =3 G Turn-Off Fall Time tf - 39 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 1.5 A S Diode Forward Current Diode Forward Voltage V I =1.0A, V=0V 0.77 1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper 4. The maximum current rating is package limited March 10,2014-REV.00 Page 2