PPJA3460 60V N-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage 60 V Current 2.5 A Features RDS(ON) , VGS 10V, ID 2.0A<75m RDS(ON) , VGS 4.5V, ID 1.0A<90m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A60 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 60 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I 2.5 A D (Note 4) Pulsed Drain Current I 10 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25 C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 100 JA - Junction to Ambient C/W August 3,2015-REV.00 Page 1 PPJA3460 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 60 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 1.0 1.75 2.5 V GS(th) DS GS D V =10V, I =2.0A - 55 75 GS D Drain-Source On-State Resistance R m DS(on) V =4.5V, I =1.0A - 63 90 GS D Zero Gate Voltage Drain Current I V =48V, V =0V - - 1 uA DSS DS GS Gate-Source Leakage Current I V =+20V, V =0V - - +100 nA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 9.3 - g V =48V, I =2.0A, DS D Gate-Source Charge Q - 2.2 - nC gs (Note 1,2) V =10V GS Gate-Drain Charge Q - 1.9 - gd Input Capacitance Ciss - 509 - V =15V, V =0V, DS GS Output Capacitance Coss - 47 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 23 - Turn-On Delay Time td - 3.2 - (on) V =30V, I =2.0A, DD D Turn-On Rise Time tr - 9.7 - V =10V, ns GS Turn-Off Delay Time td - 18.5 - (off) (Note 1,2) R =3.3 G Turn-Off Fall Time tf - 6.4 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 2.5 A S Diode Forward Current Diode Forward Voltage V I =1A, V =0V - 0.77 1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. August 3,2015-REV.00 Page 2