X-On Electronics has gained recognition as a prominent supplier of QPA2225D rf amplifier across the USA, India, Europe, Australia, and various other global locations. QPA2225D rf amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

QPA2225D Qorvo

QPA2225D electronic component of Qorvo
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Part No.QPA2225D
Manufacturer: Qorvo
Category:RF Amplifier
Description: RF Amplifier 28-38 GHz .4W GaN Amplifier
Datasheet: QPA2225D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 100
Multiples : 100
100 : USD 50.6974
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RoHS - XON
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Type
Technology
Operating Frequency
Gain
Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Test Frequency
Brand
Number Of Channels
Development Kit
Input Return Loss
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We are delighted to provide the QPA2225D from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QPA2225D and other electronic components in the RF Amplifier category and beyond.

QPA2225D 2838 GHz 0.4 Watt GaN Driver Amplifier Product Overview Qorvos QPA2225D is a wide band MMIC driver amplifier fabricated on Qorvos production 0.15 um GaN on SiC process (QGaN15). Covering 2838 GHz, the QPA2225D provides > 0.4 W of saturated output power with >23 dB of small-signal gain. The QPA2225D MMIC dimensions are 1.65 x 0.67 x 0.05 mm. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. Key Features The QPA2225D has DC blocking capacitors on both RF Frequency Range: 28 38 GHz ports, which are matched to 50 ohms. PSAT (PIN = 13 dBm): > 26 dBm Small Signal Gain: > 23 dB The QPA2225D is ideal for supporting communications and radar applications in both commercial and military IM3 (POUT/Tone = 20 dBm): -20 dBc markets. Bias: CW, V = +20 V, I = 64 mA, V = -2.5 V typ. D DQ G Die Dimensions: 1.65 x 0.67 x 0.05 mm Lead-free and RoHS compliant. Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Communications Radar Satellite Communications Electronic Warfare Ordering Information Part No. Description 2838 GHz 0.4 Watt GaN Amplifier QPA2225D (100 pcs.) QPA2225DS2 Samples (2 pcs. pack) QPA2225DEVBA Evaluation Board for QPA2225D Data Sheet Rev. B, May 2021 Subject to change without notice 1 of 23 www.qorvo.com QPA2225D 28 38 GHz 0.4 Watt GaN Driver Amplifier Recommended Operating Conditions Absolute Maximum Ratings Parameter Min Typ. Max Units Parameter Value/Range Drain Voltage (V ) 29.5 V Drain Voltage (V ) +20 V D D Gate Voltage Range (VG) -6 V to 0 V Drain Current, (I ) 64 mA DQ Drain Current (I ) 456 mA D Drain Current, RF (ID Drive) See chart page 6 mA Gate Current (IG) See plot page 18 Gate Voltage Range (VG) 2 to -2.9 V Power Dissipation (P ), 85 C 5 W DISS Gate Current, RF (IG Drive) See chart page 6 mA Input Power (PIN), CW, 50 , 18 dBm TBASE Range 40 +85 C V = 20 V, I = 64 mA, T = 85 C D DQ BASE Electrical specifications are measured at specified test Input Power (PIN), CW, 3:1 VSWR, conditions. Specifications are not guaranteed over all 18 dBm V = 20 V, I = 64 mA, T = 85 C recommended operating conditions. D DQ BASE Mounting Temperature (30 seconds) 320 C Storage Temperature -55 to +150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications (1) (2) Parameter Conditions Min Typ. Max Units Operational Frequency Range 28 38 GHz Output Power at Saturation, P P = +13 dBm > 26 dBm SAT IN Large Signal Gain PIN = +13 dBm > 13 dB Small Signal Gain, S21 > 23 dB Input Return Loss, IRL 5 dB Output Return Loss, ORL 5 dB POUT/Tone = 20 dBm Freq. = 35 GHz RD 3 Intermodulation Products, IM3 -20 dBc f = 100 MHz P /Tone = 20 dBm Freq. = 35 GHz OUT TH 5 Intermodulation Products, IM5 -30 dBc f = 100 MHz P Temperature Coefficient T = 40 C to +85 C P = +13 dBm -0.02 dBm/C SAT DIFF IN S21 Temperature Coefficient T = 40 C to +85 C -0.07 dB/C DIFF Notes: 1. Test conditions unless otherwise noted: CW, V = + 20 V, I = 64 mA, V = -2.5V +/- typical, T =+25 C, Z =50 D DQ G BASE 0 2. T is back side of 20 mil CuMo carrier plate with AuSn solder BASE Data Sheet Rev. B, May 2021 Subject to change without notice 2 of 23 www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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