TGA4533-SM K-Band Power Amplifier Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm 20L Product Features Functional Block Diagram 20 19 18 17 16 Frequency Range: 21.2 23.6 GHz Power: 32 dBm Psat, 31 dBm P1dB Gain: 22 dB 1 15 TOI: 41 dBm at 21 dBm SCL NF: 6 dB 2 14 Integrated Power Detector 3 13 Bias: Vd = 6 V, Idq = 880 mA, Vg = -0.7 V Typical 4 12 Package Dimensions: 4.0 x 4.0 x 0.85 mm 5 11 6 7 8 9 10 General Description Pin Configuration The TriQuint TGA4533-SM is a K-Band Power Pin Symbol Amplifier. The TGA4533-SM operates from 21.2 23.6 1, 3, 4, 5, 6, 10, 11, 13, N/C GHz and is designed using TriQuints power pHEMT 14, 20 production process. 2 RF IN 7, 19 Vg The TGA4533-SM typically provides 31 dBm of output 8, 18 GND power at 1dB gain compression with small signal gain of 12 RF OUT 22 dB. Third Order Intercept is 41 dBm at 21 dBm SCL. 9, 17 Vd 15 Vdet The TGA4533-SM is available in a low-cost, surface 16 Vref mount 20 lead 4x4 QFN package. It is ideally suited for Point-to-Point Radio, and K-Band Sat-Com. Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part No. ECCN Description TGA4533-SM EAR99 K-Band Power Amplifier Standard T/R size = 500 pieces on a 7 reel. - 1 of 14 - Data Sheet: Rev D 04/30/2015 Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network TGA4533-SM K-Band Power Amplifier Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typical Max Units Drain Voltage,Vd +6.5 V Vd 6 V Gate Voltage,Vg -3 to 0 V Idq 880 mA Drain to Gate Voltage, Vd Vg 10 V Id drive (Under RF 1300 mA Drive) Drain Current, Id 2 A Gate Current, Ig -8.8 to 113 mA Vg -0.7 V Power Dissipation, Pdiss 12.7 W Electrical specifications are measured at specified test conditions. RF Input Power, CW, T = 25C 26 dBm o Specifications are not guaranteed over all recommended operating Channel Temperature, Tch 200 C conditions. o Mounting Temperature (30 260 C Seconds) o Storage Temperature -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 C, Vd = 6 V, Idq = 880 mA, Vg = -0.7 V Typical. Parameter Min Typical Max Units Operational Frequency Range 21.2 23.6 GHz Gain 19 22 dB Input Return Loss, IRL 10 dB Output Return Loss, ORL 10 dB Output Power Saturation, Psat 30 32 dBm Output Power 1dB Gain Compression, P1dB 28 31 dBm Output Third Order Intercept, TOI 38.5 41 dBm Noise Figure, NF 6 dB -0.025 dB/C Gain Temperature Coefficient Power Temperature Coefficient -0.015 dB/C - 2 of 14 - Data Sheet: Rev D 04/30/2015 Disclaimer: Subject to change without notice 2015 TriQuint Semiconductor, Inc. Connecting the Digital World to the Global Network