DATASHEET HFA3134, HFA3135 FN4445 Rev 2.00 Ultra High Frequency Matched Pair Transistors August 12, 2005 The HFA3134 and HFA3135 are Ultra High Frequency Features Transistor pairs that are fabricated with Intersil Corporations NPN Transistor (f ) 8.5GHz T complementary bipolar UHF-1X process. The NPN transistors exhibit an f of 8.5GHz, while the PNP transistors NPN Current Gain (h ) 100 T FE have an f of 7GHz. Both types exhibit low noise, making T NPN Noise Figure (50 ) at 1.0GHz . 2.6dB them ideal for high frequency amplifier and mixer PNP Transistor (f ) 7GHz applications. T PNP Current Gain (h ) . 57 Both arrays are matched high frequency transistor pairs. The FE matching simplifies DC bias problems and it minimizes PNP Noise Figure (50 ) at 900MHz 4.6dB imbalances in differential amplifier configurations. Their high Small Package (EIAJ-SC74 Compliant) SOT23-6 f enables the design of UHF amplifiers which exhibit T exceptional stability. Pb-Free Plus Anneal Available (RoHS Compliant) Ordering Information Applications PART NUMBER TEMP. PKG. VHF/UHF Amplifiers (BRAND) RANGE (C) PACKAGE DWG. VHF/UHF Mixers HFA3134IH96 -40 to 85 6 Ld SOT23 P6.064 IF Converters (04/ ) Tape and Reel HFA3134IHZ96 -40 to 85 6 Ld SOT23 P6.064 Synchronous Detectors (4Z/ ) (Note) Tape and Reel (Pb-free) Pinouts HFA3135IH96 -40 to 85 6 Ld SOT23 P6.064 (05/ ) Tape and Reel HFA3134 (SOT23) HFA3135IHZ96 -40 to 85 6 Ld SOT23 P6.064 TOP VIEW (5Z/ ) (Note) Tape and Reel (Pb-free) NOTE: Intersil Pb-free plus anneal products employ special Pb-free 1 6 material sets molding compounds/die attach materials and 100% Q 1 matte tin plate termination finish, which are RoHS compliant and 2 5 compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow Q 3 4 temperatures that meet or exceed the Pb-free requirements of 2 IPC/JEDEC J STD-020. HFA3135 (SOT23) TOP VIEW 1 6 Q 1 2 5 Q 3 4 2 FN4445 Rev 2.00 Page 1 of 5 August 12, 2005 Z5 05 4Z 04HFA3134, HFA3135 Absolute Maximum Ratings Thermal Information Collector to Emitter Voltage (R 10k to GND) 11V Thermal Resistance (Typical, Note 1) (C/W) B JA Collector to Base Voltage (Open Emitter) 12V SOT23-6 Package 350 Emitter to Base Voltage (Reverse Bias) . 4.5V Maximum Junction Temperature (Die) 175C Collector Current 14mA at T =150C J Maximum Junction Temperature (Plastic Package) 150C 26mA at T =125C J Maximum Storage Temperature Range -65C to 150C Base Current (Note 2) .1.7mA Maximum Lead Temperature . 300C ESD Rating (Soldering 10s, Lead Tips Only) Human Body Model 400V (Per MIL-STD-883 Method 3015.7) Operating Conditions Temperature Range .-40C to 85C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. is measured with the component mounted on an evaluation PC board in free air. JA 2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current specification. Electrical Specifications T = 25C A (NOTE 3) TEST PARAMETER SYMBOL TEST CONDITIONS LEVEL MIN TYP MAX UNITS DC CHARACTERISTICS FOR HFA3134 (NPN) Collector to Base Breakdown Voltage V I = 10A, I = 0 A 12 21 - V (BR)CBO C E Collector to Emitter Breakdown Voltage V I = 100 A, I = 0 A 4 9 - V (BR)CEO C B V I = 100 A, R = 10k A11 17 - V (BR)CER C B Emitter to Base Breakdown Voltage (Note 4) V I = 10A, I = 0 B - 6 - V (BR)EBO E C Collector-Cutoff-Current I V = 6V, I = 0 A -5 - 5 nA CEO CE B Collector-Cutoff-Current I V = 8V, I = 0 A -5 - 5 nA CBO CB E Emitter-Cutoff-Current (Note 5) I V = 1V, I = 0 B - 1 - pA EBO EB C Collector to Collector Leakage C - 1 - nA Collector to Emitter Saturation Voltage V I = 10mA, I = 1mA A - 95 250 mV CE(SAT) C B Base to Emitter Voltage (Note 5) V I = 10mA, V = 2V A - 780 1000 mV BE C CE Q to Q Base to Emitter Voltage Match V I = 10mA, V = 2V A - 1.2 6 mV 1 2 BE C CE (Note 5) I = 1mA, V = 2V A - 1.0 6 mV C CE I = 0.1mA, V = 2V A - 0.7 6 mV C CE Base to Emitter Voltage Drift I = 10mA C - -1.5 - mV/C C DC Forward-Current Transfer Ratio h I = 10mA, V = 2V A 48 80 200 FE C CE (Note 5) I = 1mA, V = 2V A 48 87 200 C CE I = 0.1mA, V = 2V A 48 90 200 C CE I = 10mA, V = 5V A 48 96 200 C CE I = 1mA, V = 5V A 48 96 200 C CE I = 0.1mA, V = 5V A 48 100 200 C CE Q to Q Current Transfer Ratio Match h 1mA I 10mA, A- 2 8 % 1 2 FE C 1V V 5V CE Early Voltage V I = 1mA, V = 3V A 20 30 - V A C CE FN4445 Rev 2.00 Page 2 of 5 August 12, 2005