X-On Electronics has gained recognition as a prominent supplier of K7R641882M-EC20000 sram across the USA, India, Europe, Australia, and various other global locations. K7R641882M-EC20000 sram are a product manufactured by Samsung. We provide cost-effective solutions for sram, ensuring timely deliveries around the world.

K7R641882M-EC20000

K7R641882M-EC20000 electronic component of Samsung
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Part No.K7R641882M-EC20000
Manufacturer: Samsung
Category:SRAM
Description: 2MX36 AND 4MX18 AND 8MX9 QDR II B2 SRAM
Datasheet: K7R641882M-EC20000 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 13.9851 ea
Line Total: USD 55.94

Availability - 0
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 4
Multiples : 1
4 : USD 13.9851
10 : USD 13.2156

     
Manufacturer
Product Category
RoHS - XON
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We proudly offer the K7R641882M-EC20000 SRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the K7R641882M-EC20000 SRAM.

K7R643682M K7R641882M TM K7R640982M 2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM 72Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON ASAS I BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi- lar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 March 2007 - 1 -K7R643682M K7R641882M TM K7R640982M 2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM Document Title TM 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDR II b2 SRAM Revision History Draft Date Remark Rev. No. History Advance Sep, 14 2002 0.0 1. Initial document. Preliminary Oct. 24, 2002 0.1 1. Update AC timing characteristics. 2. Change the JTAG instruction coding. Preliminary Feb. 18, 2003 0.2 1. Change the AC timing characteristics. (-25/-20 parts) 2. Correct the overshoot and undershoot timing diagrams. 3. Change the JTAG Block diagrams. 4. Update the Boundary scan exit order. Preliminary Mar. 20, 2003 0.3 1. Correct the JTAG ID register definition 2. Correct the AC timing parameter (delete the tKHKH Max value) Preliminary Aug. 16, 2004 0.4 1. Add the Power-on Sequence specification Preliminary Oct. 18, 2004 0.5 1. Correct the pin name table Preliminary May. 17, 2005 0.6 1. Update the power consumption (Icc & Isb) Final Aug. 2, 2005 1.0 1. Finalize the datasheet Final Jul. 6, 2006 1.1 1. Add Pb-free comment 2. Change the Max. clock cycle time in AC TIMING CHARACTERIS- TICS Final Jan. 23, 2007 1.2 1. Correct the pin name table Final Mar. 5, 2007 1.3 1. Add Detail Specification of Power up Sequence Rev. 1.3 March 2007 - 2 -

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
SAMSUNG
Samsung ARTIK
SAMSUNG ELECTRO-MECH
Samsung Electro-Mechanics
Samsung Electro-Mechanics America, Inc.
SAMSUNG GVI
SAMSUNG LED
SAMSUNG PASSIVES
SAMSUNG SDI
SAMSUNG SEMI
Samsung Semiconductor
Samsung Semiconductor, Inc.
SMP

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