SKM300GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 420 A C c T = 175 C j T =80C 319 A c I 300 A Cnom I I = 3xI 900 A CRM CRM Cnom V -20 ... 20 V GES V = 720 V CC SEMITRANS 4 t V 15 V T =125 C 10 s psc GE j V 1200 V CES T -40 ... 175 C j Inverse diode I T =25C 353 A F c T = 175 C j SKM300GA12V T =80C 264 A c I 300 A Fnom I I = 3xI 900 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 1548 A FSM p j V-IGBT = 6. Generation Trench V-IGBT T -40 ... 175 C j (Fuji) Module CAL4 = Soft switching 4. Generation CAL-diode I T =80 C 500 A terminal t(RMS) Isolated copper baseplate using DBC T -40 ... 125 C stg technology (Direct Copper Bonding) V AC sinus 50 Hz, t = 1 min 4000 V isol UL recognized, file no. E63532 Increased power cycling capability Characteristics With integrated gate resistor Low switching losses at high di/dt Symbol Conditions min. typ. max. Unit Typical Applications* IGBT AC inverter drives I =300A V C T =25C 1.85 2.30 V j CE(sat) UPS V =15V GE T =150 C 2.25 2.55 V j Electronic welders chiplevel Switched reluctance motor V T =25C 0.94 1.04 V CE0 j chiplevel T =150 C 0.88 0.98 V j Remarks r T =25C 3.03 4.20 m CE V =15V j GE Case temperature limited to chiplevel T = 125C max, recomm. T =150 C 4.57 5.23 m c j T = -40 ... +150C, product op V V =V , I = 12 mA 5.5 6 6.5 V GE(th) GE CE C rel. results valid for T = 150 j I T =25C 0.1 0.3 mA CES V =0V j GE V = 1200 V CE T =150 C mA j C f=1MHz 18 nF ies V =25V CE C f=1MHz 1.77 nF oes V =0V GE C f=1MHz 1.768 nF res Q V = - 8 V...+ 15 V 3310 nC G GE R 2.50 Gint V = 600 V t CC T =150 C 340 ns d(on) j I =300A C t T =150 C 48 ns r j V =15V GE E T =150 C 23 mJ on j R =2.5 G on t T =150 C 576 ns d(off) R =2.5 j G off di/dt = 7700 A/s t on T =150 C 69 ns f j di/dt =3500A/s off du/dt = 7500 V/ E off T =150 C 33 mJ off j s R per IGBT 0.11 K/W th(j-c) GA by SEMIKRON Rev. 3 15.08.2012 1SKM300GA12V Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I = 300 A V = V F T =25C 2.17 2.49 V F EC j V =0V GE T =150 C 2.11 2.42 V j chiplevel V T =25C 1.3 1.5 V j F0 chiplevel T =150 C 0.9 1.1 V j r T =25C 2.9 3.3 m j F chiplevel T =150 C 4.0 4.4 m j SEMITRANS 4 I = 300 A I F T =150 C 350 A j RRM di/dt =8500A/s off Q T =150 C 45 C j rr V =15V GE E T =150 C 21 mJ rr j V = 600 V CC R per diode 0.17 K/W th(j-c) Module SKM300GA12V L 15 20 nH CE R T =25C 0.18 m CC +EE C terminal-chip T =125C 0.22 m C Features R per module 0.02 0.038 K/W th(c-s) V-IGBT = 6. Generation Trench V-IGBT M to heat sink M6 3 5 Nm s (Fuji) CAL4 = Soft switching 4. Generation M M6 2.5 5 Nm t to terminals CAL-diode M4 1.1 2 Nm Isolated copper baseplate using DBC w 330 g technology (Direct Copper Bonding) UL recognized, file no. E63532 Increased power cycling capability With integrated gate resistor Low switching losses at high di/dt Typical Applications* AC inverter drives UPS Electronic welders Switched reluctance motor Remarks Case temperature limited to T = 125C max, recomm. c T = -40 ... +150C, product op rel. results valid for T = 150 j GA 2 Rev. 3 15.08.2012 by SEMIKRON