X-On Electronics has gained recognition as a prominent supplier of SD57045-01 rf mosfet transistors across the USA, India, Europe, Australia, and various other global locations. SD57045-01 rf mosfet transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for rf mosfet transistors, ensuring timely deliveries around the world.

SD57045-01 STMicroelectronics

SD57045-01 electronic component of STMicroelectronics
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See Product Specifications
Part No.SD57045-01
Manufacturer: STMicroelectronics
Category:RF MOSFET Transistors
Description: RF MOSFET Transistors N-Ch 65 Volt 5 Amp
Datasheet: SD57045-01 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 51.3265 ea
Line Total: USD 51.33

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 11 Jun to Mon. 17 Jun

MOQ : 50
Multiples : 1
50 : USD 83.291

0 - WHS 2


Ships to you between Mon. 17 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 69.1422
10 : USD 64.9537
50 : USD 62.8488
100 : USD 60.8186

0 - WHS 3


Ships to you between Tue. 11 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 51.3265

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Height
Length
Type
Width
Brand
Forward Transconductance - Min
Channel Mode
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We are delighted to provide the SD57045-01 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SD57045-01 and other electronic components in the RF MOSFET Transistors category and beyond.

SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P = 45W WITH 13 dB gain 945 MHz OUT BeO FREE PACKAGE M250 epoxy sealed ORDER CODE BRANDING SD57045-01 SD57045-01 DESCRIPTION The SD57045-01 is a common source N-Channel PIN CONNECTION enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and 1 industrial applications at frequencies up to 1.0 GHz. The SD57045-01 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station 3 applications requiring high linearity. 2 1. Drain 3. Source 2. Gate ABSOLUTE MAXIMUM RATINGS (T = 25C) CASE Symbol Parameter Value Unit V Drain-Source Voltage 65 V (BR)DSS V Drain-Gate Voltage (R = 1 M) 65 V DGR GS V Gate-Source Voltage 20 V GS I Drain Current 5 A D P Power Dissipation ( Tc = 70C) 93 W DISS Tj Max. Operating Junction Temperature 200 C T Storage Temperature -65 to + 200 C STG THERMAL DATA R Junction -Case Thermal Resistance 1.4 C/W th(j-c) November, 19 2002 1/11SD57045-01 ELECTRICAL SPECIFICATION (T = 25C) CASE STATIC Symbol Test Conditions Min. Typ. Max. Unit V V = 0 V I = 1 mA 65 V (BR)DSS GS DS I V = 0 V V = 28 V 1 A DSS GS DS I V = 20 V V = 0 V 1 A GSS GS DS V V = 28 V I = 250 mA 2.5 5.0 V GS(Q) DS D V V = 10 V I = 3 A 0.7 0.9 V DS(ON) GS D G V = 10 V I = 5 A 2.0 2.7 mho FS DS D C V = 0 V V = 28 V f = 1 MHz 80 pF ISS GS DS C V = 0 V V = 28 V f = 1 MHz 40 pF OSS GS DS C V = 0 V V = 28 V f = 1 MHz 3.2 pF RSS GS DS Ref. 7133620B DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P V = 28 V I = 250 mA f = 945 MHz 45 W OUT DD DQ IMD3 V = 28 V I = 250 mA P = 45 W PEP -32 -28 dBc DD DQ OUT G V = 28 V I = 250 mA P = 45 W PEP 13 15 dB PS DD DQ OUT V = 28 V I = 250 mA P = 45 W PEP 33 40 % D DD DQ OUT Load V = 28 V I = 250 mA P = 45 W f = 945 MHz DD DQ OUT 10:1 VSWR mismatch ALL PHASE ANGLES note: f = 945 MHz 1 PEP f = 945.1 MHz 2 IMPEDANCE DATA D Z D Typical Typical Drain Input G Zin S FREQ. Z ()Z () IN DL 925 MHz 1.27 + j 0.82 2.22 - j 1.63 930 MHz 1.21 + j 0.79 2.24 - j 1.61 945 MHz 1.04 + j 0.71 2.30 - j 1.52 960 MHz 0.93 + j 0.43 2.37 - j 1.37 965 MHz 0.91 + j 0.41 2.43 - j 1.36 2/11

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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