STP03D200 STMicroelectronics

STP03D200 2 kV NPN Darlington transistor Features Extra high voltage capability TAB High gain characteristic Application Active start-up network in 3 phase S.M.P.S. 3 (see application note AN2454) 2 1 TO-220 Description The STP03D200 is made by two extra high voltage NPN transistors in Darlington configuration housed in a single package. The resulting device shows high gain performance. Figure 1. Internal schematic diagram (2, TAB) C B (1) SC09020 E (3) Table 1. Device summary Order code Marking Package Packaging STP03D200 P03D200 TO-220 Tube February 2010 Doc ID 14059 Rev 2 1/7 www.st.com 7Electrical ratings STP03D200 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-base voltage (I = 0) 2000 V CBO E V Collector-emitter voltage (I = 0) 1200 V CEO B V Emitter-base voltage (I = 0) 20 V EBO C I Collector current 100 mA C I Collector peak current (t < 5 ms) 200 mA CM P P Total dissipation at T = 25 C 40 W TOT c T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 3.13 C/W thJC 2/7 Doc ID 14059 Rev 2