SERIES CENTIGRID 136C ESTABLISHED RELIABILITY RELAY DPDT SENSITIVE CMOS COMPATIBLE SERIES RELAY TYPE DESIGNATION DPDT sensitive relay with internal power MOSFET driver, Zener diode 136C gate protection, and diode coil suppression INTERNAL CONSTRUCTION DESCRIPTION UNI-FRAME The sensitive 136C Centigrid relay is an ultraminiature, hermetically sealed, armature relay capable of being directly driven by most IC logic families. Its low UPPER profile height and .100 grid spaced terminals, which precludes the need for STATIONARY ARMATURE CONTACT spreader pads, make it ideal for applications where extreme packaging density and/or close PC board spacing are required. The basic concept and internal mechanical structure are similar to the 114 DPDT relay. The following unique construction features and manufacturing LOWER techniques provide overall high reliability and excellent resistance to STATIONARY CONTACT environmental extremes: All welded construction. MOSFET, ZENER DIODE Unique uni-frame design providing high magnetic efficiency and mechanical AND SUPPRESSION DIODE rigidity. High force/mass ratios for resistance to shock and vibration. Advanced cleaning techniques provide maximum assurance of internal cleanliness. Precious metal alloy contact material with gold plating assures excellent high current and dry circuit switching capabilities. The sensitive 136C Centigrid relay has a high resistance coil, thus requiring extremely low operating power (200 mW, typical). The advantages of reduced heat dissipation and power supply demands are a plus. By virtue of its inherently low intercontact capacitance and contact circuit ENVIRONMENTAL AND losses, the 136C relay has proven to be an excellent ultraminiature RF switch PHYSICAL SPECIFICATIONS for frequency ranges well into the UHF spectrum. A typical RF application for Temperature the Centigrid relay is in handheld radio transceivers, wherein the combined 65C to +125C (Ambient) features of good RF performance, small size, low coil power dissipation and high reliability make it a preferred method of Transmit- Receive switching (see Vibration 30 gs to 3000 Hz (General Note 1) Figure 1). Shock 75 gs, The sensitive Series 136C utilizes an internal silicon diode for coil (General Note 1) 6 msec, half-sine suppression, a Zener diode to protect the MOSFET gate input, and an N- Acceleration 50 gs channel enhancement-mode MOSFET chip that enables direct relay interfacing with most microprocessor and IC logic families (CMOS, TTL and Enclosure Hermetically sealed MOS). Weight 0.18 oz. (5.11g) max. 2003 TELEDYNE RELAYS SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE 136C Page 1 www.teledynerelays.com 136C/1203/Q1 ESTABLISHED RELIABILITYESTABLISHED RELIABILITY INSERTION LOSS SERIES 136C GENERAL ELECTRICAL SPECIFICATIONS (65C to +125C unless otherwise noted) (Notes 2 & 3) Contact Arrangement 2 Form C (DPDT) Rated Duty Continuous Contact Resistance 0.1 ohm max. before life 0.2 ohm max. after life at 1A/28Vdc (measured 1/8 from header) Resistive: 1 Amp/28Vdc Contact Load Ratings (DC) Inductive: 200 mA/28Vdc (320 mH) (See Fig. 2 for other DC Lamp: 100 mA/28Vdc resistive voltage/current ratings) Low Level: 10 to 50 A/10 to 50mV Resistive: 250 mA/115Vac, 60 and 400 Hz (Case not grounded) Contact Load Ratings (AC) 100 mA/115Vac, 60 and 400 Hz (Case grounded) 10,000,000 cycles (typical) at low level Contact Life Ratings 1,000,000 cycles (typical) at 0.5A/28Vdc resistive 100,000 cycles min. at all other loads specified above Contact Overload Rating 2A/28Vdc Resistive (100 cycles min.) Contact Carry Rating Contact factory Operate Time 4.0 msec max. at nominal rated coil voltage Release Time 7.5 msec max. Contact Bounce 1.5 msec max. Intercontact Capacitance 0.4 pf typical Insulation Resistance 10,000 megohms min. between mutually isolated terminals Dielectric Strength Atmospheric pressure: 500 Vrms/60Hz 70,000 ft.: 125 Vrms/60Hz Negative Coil Transient (Vdc) 1.0 max Diode P.I.V. (Vdc) 100 min. Zener Voltage (Vdc) 17 min. to 23 max. Zener Leakage Current (A 15.2 Vdc) 2.5 max Gate Voltage to Turn Off (Vdc, Max.) 0.5 Power FET Characteristics Gate Voltage to Turn On (Vdc, Max.) 3.8 (Note 4) 65C to +125C Drain-Source Voltage (Vdc, Max.) 55 DETAILED ELECTRICAL SPECIFICATIONS (65C to +125C unless otherwise noted) (Note 3) BASE PART NUMBERS 136C-5 136C-6 136C-9 136C-12 136C-18 136C-26 (See Note 8 for full P/N example) Nom. 5.0 6.0 9.0 12.0 18.0 26.5 Coil Voltage (Vdc) Max. 5.6 8.0 12.0 16.0 24.0 32.0 Max. 56.0 33.0 26.4 17.7 13.8 10.2 Coil Current (mAdc 25C) Min. 43.0 27.0 17.8 11.3 8.4 5.8 Nominal Coil Operating Power 25C (Milliwatts) 250 180 203 180 203 219 Pick-up Voltage (Vdc) (Note 4) Max. 4.0 4.9 7.3 9.8 14.6 19.5 Min. 0.13 0.18 0.27 0.36 0.54 0.72 Drop-out Voltage (Vdc) (Note 4) Max. 2.3 3.2 4.9 6.5 9.8 13.0 PERFORMANCE CURVES (NOTE 2) TYPICAL RF PERFORMANCE TYPICAL DC CONTACT RATING (RESISTIVE) 0 .1 300 .2 .3 250 .4 200 10 1.92 20 1.22 150 30 1.07 100 40 1.02 50 1.01 50 60 1.00 70 1.00 .01 0.5 .1 .5 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 LOAD CURRENT (AMPS DC) FREQUENCY (GHz) FIGURE 2 FIGURE 1 136C Page 2 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE 2003 TELEDYNE RELAYS www.teledynerelays.com 136C/1203/Q1 RETURN LOSS (VSWR) ISOLATION ACROSS CONTACTS ISOLATION ACROSS POLES dB VSWR LOAD VOLTAGE (VDC)