TC74VHC14FT(EL,K) Toshiba

TC74VHC14F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC14F, TC74VHC14FT, TC74VHC14FK Hex Schmitt Inverter TC74VHC14F The TC74VHC14 is an advanced high speed CMOS Schmitt 2 INVERTER fabricated with silicon gate C MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. Pin configuration and function are the same as the TC74VHC04 but the inputs have hysteresis and with its schmitt trigger function, the TC74VHC14 can be used as a line receivers which will receive slow input signals. An input protection circuit ensures that 0 to 5.5 V can be TC74VHC14FT applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. Features High speed: t = 5.5 ns (typ.) at V = 5 V pd CC Low power dissipation: I = 2 A (max) at Ta = 25C CC TC74VHC14FK Power down protection is provided on all inputs. Balanced propagation delays: t t pLH pHL Wide operating voltage range: V = 2 V to 5.5 V CC (opr) Low noise: V = 0.8 V (max) OLP Pin and function compatible with 74ALS14 Weight SOP14-P-300-1.27A : 0.18 g (typ.) TSSOP14-P-0044-0.65A : 0.06 g (typ.) VSSOP14-P-0030-0.50 : 0.02 g (typ.) Start of commercial production 1991-05 1 2014-03-01 TC74VHC14F/FT/FK Pin Assignment IEC Logic Symbol (1) (2) 1A 1Y 1A 1 14 V CC (3) (4) 2A 2Y (5) (6) 3A 3Y 1Y 2 13 6A (9) (8) 4A 4Y (11) (10) 2A 3 12 6Y 5A 5Y (13) (12) 6A 6Y 2Y 4 11 5A 3A 5 10 5Y 3Y 6 9 4A GND 7 8 4Y (top view) Truth Table A Y L H H L System Diagram, Waveform A Y V H V P V (A) IN V N V (Y) OUT Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7.0 V CC DC input voltage V 0.5 to 7.0 V IN DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 180 mW D Storage temperature T 65 to 150 C stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2014-03-01