TCK111G,TCK112G TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK111G, TCK112G 3A, 8 m Ultra Low On resistance Load Switch IC with Reverse Current Blocking and Thermal Shutdown function The TCK111G and TCK112G are Load Switch ICs for power management with Reverse Current Blocking and Thermal Shutdown function featuring ultra low switch on resistance, high output current and wide input voltage operation from 1.1 to 5.5 V. Switch ON resistance is only 8.3 m (typ.) at V = 5.0 V, -1.5 A load conditions IN and output current is available on 3.0 A. And these feature a slew rate control driver and output auto-discharge function. This device is available in 0.5 mm pitch ultra small package WCSP6C WCSP6C (1.0 mm x 1.5 mm, t: 0.5 mm (typ.)).Thus this devices is Weight: 1.4 mg (typ.) ideal for portable applications that require high-density board assembly such as cellular phone. Feature Low ON resistance: R = 8.3 m (typ.) at V = 5.0 V, -1.5 A ON IN R = 8.4 m (typ.) at V = 3.3 V, -1.5 A ON IN R = 8.4 m (typ.) at V = 1.8 V, -1.5 A ON IN R = 8.5 m (typ.) at V = 1.1 V, -1.5 A ON IN Wide input voltage operation: V = 1.1 to 5.5 V IN Reverse current blocking Inrush current reducing circuit Thermal Shutdown function Output auto-discharge ( TCK112G ) Pull down connection between CONTROL and GND Ultra small package : WCSP6C (1.0mm x 1.5mm, t: 0.5 mm(typ.)) 1 2014-02-28 TCK111G,TCK112G Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V -0.3 to 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output voltage V -0.3 to 6.0 V OUT DC 3.0 A Output current I OUT Pulse 4.0 (Note 1) A Power dissipation P 1.2 (Note 2) W D T 40 to 85 C Operating temperature range opr Junction temperature Tj 150 C Storage temperature T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: 100 s pulse, 2% duty cycle Note2: Rating at mounting on a board (Board material: Glass epoxy (FR4) 2 Board dimension: 25.4mm x 25.4mm (both sides of board) t=1.6mm, Cu pad area: 645mm ) Pin Assignment(Top view) Top marking 1 2 Index A A1: VOUT Lot trace code B1: VOUT C1: GND B V: TCK111G A2: VIN W: TCK112G B2: VIN C2: CONTROL C 2 2014-02-28