TPD2005F(EL,F) Toshiba

TPD2005F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD2005F High-Side Power Switch Array (8 Channels) for Motors, Solenoids, and Lamp Drivers The TPD2005F is an 8-channel high-side switch array for vertical power MOSFET output. A monolithic power IC, it can directly drive a power load from a CMOS or TTL logic circuit (such as an MPU). It offers overcurrent and overtemperature protection functions. Features z A high-side switch array incorporating an N-channel power MOSFET (1.2 max.) and an 8-channel charge pump z Can directly drive a power load from a microprocessor. Weight: 0.29g (typ.) z Built-in protection against overtemperature protection and overcurrent protection z 8-channel access enables space-saving design z High operating supply voltage : 40 V z Low on resistance : 1.2 max. ( V = 12 V, I = 0.5 A (per channel)) DD O z Supports parallel operation. z Low supply current : 5 mA max. ( V = 40 V, V = 0 V) DD IN z Supplied in an SSOP-24 package (300 mil) in embossed taping. Pin Assignment Marking (top view) V 1 24 N.C. DD Lot No. GND 2 23 N.C. Note Part No. (or abbreviation code) TPD200 5F IN1 3 22 OUT1 IN2 4 21 OUT2 Note : A dot marking for identifies the indication of product Labels. IN3 5 20 OUT3 Without a dot: Pb /INCLUDES > MCV IN4 6 19 OUT4 With a dot: G /RoHS COMPATIBLE or G /RoHS Pb IN5 7 18 OUT5 IN6 8 17 OUT6 Please contact your TOSHIBA sales representative for details as to IN7 9 16 OUT7 environmental matters such as the RoHS compatibility of Product. IN8 10 15 OUT8 The RoHS is the Directive 2011/65/EU of the European Parliament and GND 11 14 N.C. of the Council of 8 June 2011 on the restriction of the use of certain V 12 13 N.C. hazardous substances in electrical and electronic equipment. DD Note: Due to its MOS structure, this product is sensitive to static electricity. Start of commercial production 1999-05 1 2013-11-01 TPD2005F Block Diagram 2 2013-11-01